Researching | An NMOS output-capacitorless low-dropout regulator with dynamic-strength event-driven charge pump

Journal of Semiconductors, Volume. 45, Issue 6, 062203(2024)

An NMOS output-capacitorless low-dropout regulator with dynamic-strength event-driven charge pump

Yiling Xie, Baochuang Wang, Dihu Chen, and Jianping Guo^*

Author Affiliations

School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, China

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References(22)

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[8] Y Lu, Y P Wang, Q Pan et al. A fully-integrated low-dropout regulator with full-spectrum power supply rejection. IEEE Trans Circuits Syst I Regul Pap, 62, 707(2015).

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[10] A Maity, A Patra. Tradeoffs aware design procedure for an adaptively biased capacitorless low dropout regulator using nested miller compensation. IEEE Trans Power Electron, 31, 369(2016).

[11] Y Q Huang, Y Lu, F Maloberti et al. Nano-ampere low-dropout regulator designs for IoT devices. IEEE Trans Circuits Syst I Regul Pap, 65, 4017(2018).

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[13] G X Li, H M Qian, J P Guo et al. Dual active-feedback frequency compensation for output-capacitorless LDO with transient and stability enhancement in 65-nm CMOS. IEEE Trans Power Electron, 35, 415(2020).

[14] G G Cai, Y Lu, C C Zhan et al. A fully integrated FVF LDO with enhanced full-spectrum power supply rejection. IEEE Trans Power Electron, 36, 4326(2021).

[15] Y Song, J Oh, S Y Cho et al. A fast droop-recovery event-driven digital LDO with adaptive linear/binary two-step search for voltage regulation in advanced memory. IEEE Trans Power Electron, 37, 1189(2022).

[16] W Y Hsu, J Aymerich, X L Yang et al. A 0-to-35mA NMOS capacitor-less LDO with dual-loop regulation achieving 3ns response time and 1pF-to-10nF loading range. ESSCIRC 2023-IEEE 49th European Solid State Circuits Conference (ESSCIRC), 253(2023).

[17] X Y Wang, P P Mercier. A dynamically high-impedance charge-pump-based LDO with digital-LDO-like properties achieving a sub-4-fs FoM. IEEE J Solid-State Circuits, 55, 719(2020).

[18] J M Zhao, Y Gao, T T Zhang et al. A 310-nA quiescent current 3-fs-FoM fully integrated capacitorless time-domain LDO with event-driven charge pump and feedforward transient enhancement. IEEE J Solid-State Circuits, 56, 2924(2021).

[19] W J Han, H Lee. A 340-nA-quiescent 80-mA-load 0.02-fs-FOM active-capacitor-based low-dropout regulator in standard 0.18-μm CMOS. IEEE Solid-State Circuits Lett, 4, 125(2021).

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Yiling Xie, Baochuang Wang, Dihu Chen, Jianping Guo. An NMOS output-capacitorless low-dropout regulator with dynamic-strength event-driven charge pump[J]. Journal of Semiconductors, 2024, 45(6): 062203

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Paper Information

Category: Articles

Received: Jan. 4, 2024

Accepted: --

Published Online: Jul. 8, 2024

The Author Email: Jianping Guo (JPGuo)

DOI:10.1088/1674-4926/23120057

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