Study on High Sensitivity and Low Offset Hall Device Based on 0.18 &#956;m BCD Process

LI Jielin; LI Jianqiang; LI Liang; ZHOU Lin; WANG Shuangxi; XU Yue

doi:10.13911/j.cnki.1004-3365.240138

Microelectronics, Volume. 55, Issue 1, 159(2025)

Study on High Sensitivity and Low Offset Hall Device Based on 0.18 μm BCD Process

LI Jielin¹, LI Jianqiang², LI Liang², ZHOU Lin¹, WANG Shuangxi¹, and XU Yue^1,3

¹College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, P. R. China

²Beijing Smartchip Microelectronics Technology Company Limited, Beijing 102200, P. R. China

³National and Local Joint Engineering Laboratory of RF Integration & Micro-assembly Technology, Nanjing, 210023, P. R. China

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LI Jielin, LI Jianqiang, LI Liang, ZHOU Lin, WANG Shuangxi, XU Yue. Study on High Sensitivity and Low Offset Hall Device Based on 0.18 μm BCD Process[J]. Microelectronics, 2025, 55(1): 159

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Paper Information

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Received: Apr. 29, 2024

Accepted: Jun. 19, 2025

Published Online: Jun. 19, 2025

The Author Email:

DOI:10.13911/j.cnki.1004-3365.240138

Topics

laser devices and laser physics

Lasers and Laser Optics

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laser manufacturing

Instrumentation, Measurement and Metrology