High-performance MOCVD-SiN<sub>x</sub>/AlN/GaN MIS-HEMTs with low noise and high linearity for millimeter waves

Jing YUAN; Guan-Jun JING; Jian-Chao WANG; Liu WANG; Run-Hua GAO; Yi-Chuan ZHANG; Yi-Xu YAO; Ke WEI; Yan-Kui LI; Xiao-Juan CHEN

doi:10.11972/j.issn.1001-9014.2024.02.009

Journal of Infrared and Millimeter Waves, Volume. 43, Issue 2, 200(2024)

High-performance MOCVD-SiN_x/AlN/GaN MIS-HEMTs with low noise and high linearity for millimeter waves

Jing YUAN^1,2, Guan-Jun JING^1,2, Jian-Chao WANG^1,2, Liu WANG^1,2, Run-Hua GAO¹, Yi-Chuan ZHANG¹, Yi-Xu YAO^1,2, Ke WEI¹, Yan-Kui LI¹, and Xiao-Juan CHEN^1、*

Author Affiliations

¹High-Frequency High-Voltage Device and Integrated Circuits R&D Center，Institute of Microelectronics of Chinese Academy of Sciences，Beijing 100029，China

²University of Chinese Academy of Sciences，Beijing 100029，China

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References(8)

[1] Medjdoub F, Tagro Y, Zegaoui M et al. Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz[J]. Electron Device Letters, IEEE, 33, 1258-1260(2012).

[2] Lu X, Ma J, Jiang H et al. Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition[J]. Applied Physics Letters, 105, 287-305(2014).

[3] Woojin Choi, Chen Renjie, Cooper Levy et al. Intrinsically Linear Transistor for Millimeter-Wave Low Noise Amplifiers[J]. Nano letters, 20, 2812-2820(2020).

[4] Yao Y, Jiang Q, Huang S et al. Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy[J]. Japanese Journal of Applied Physics, 119, 233502(2021).

[5] Guo F, Huang S, Wang X et al. Suppression of interface states between nitride-based gate dielectricss and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments[J]. Applied Physics Letters, 118, 093503(2021).

[6] Guidry M., Romanczyk B., Li H. et al. Demonstration of 30 GHz OIP3/PDC > 10 dB by mm-wave N-polar Deep Recess MISHEMTs. 2019 14th European Microwave Integrated Circuits Conference (EuMIC), 64-6(2019).

[7] Shrestha P, Buckwalter J F, Mishra U K et al. High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz[J]. IEEE Electron Device Letters, 1-1(2020).

[8] Guidry M., Shrestha P., Liu Wenjian et al. Improved N-polar GaN mm-wave Linearity, Efficiency, and Noise[C], 291-294(2022).

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Jing YUAN, Guan-Jun JING, Jian-Chao WANG, Liu WANG, Run-Hua GAO, Yi-Chuan ZHANG, Yi-Xu YAO, Ke WEI, Yan-Kui LI, Xiao-Juan CHEN. High-performance MOCVD-SiN_x/AlN/GaN MIS-HEMTs with low noise and high linearity for millimeter waves[J]. Journal of Infrared and Millimeter Waves, 2024, 43(2): 200

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Paper Information

Category: Research Articles

Received: Jul. 14, 2023

Accepted: --

Published Online: Apr. 29, 2024

The Author Email: Xiao-Juan CHEN (chenxiaojuan@ime.ac.cn)

DOI:10.11972/j.issn.1001-9014.2024.02.009

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