Journal of Infrared and Millimeter Waves, Volume. 43, Issue 2, 200(2024)
High-performance MOCVD-SiNx/AlN/GaN MIS-HEMTs with low noise and high linearity for millimeter waves
Fig. 1. (a) Simulation diagram of SiNx/AlN/GaN heterostructure;(b) SiNx/AlN/GaN 2DEG density and heterostructure energy band simulation diagram
Fig. 2. (a) Scanning electron microscopy(SEM) image of the two-finger device;(b) "T" gate structure of SEM
Fig. 3. Measurements of device surface:(a) fitting curve of Arrhenius analysis;(b) density distribution of interfacial Nss
Fig. 4. Basic electrical test of the device: (a) output I-V curves; (b) transfer and transconductance curves; (c) Vds = 6 V transconductance, first and second derivative curves of transconductance with respect to Vgs; (d) small signal test curve
Fig. 5. (a) Noise and gain curves of fixed bias devices; (b) variation curves of noise and gain with source-drain voltage
Fig. 6. (a) Measurements of linearity of devices at Vds = 3 V; (b) measurements of devices at Vds = 6 V
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Jing YUAN, Guan-Jun JING, Jian-Chao WANG, Liu WANG, Run-Hua GAO, Yi-Chuan ZHANG, Yi-Xu YAO, Ke WEI, Yan-Kui LI, Xiao-Juan CHEN. High-performance MOCVD-SiNx/AlN/GaN MIS-HEMTs with low noise and high linearity for millimeter waves[J]. Journal of Infrared and Millimeter Waves, 2024, 43(2): 200
Category: Research Articles
Received: Jul. 14, 2023
Accepted: --
Published Online: Apr. 29, 2024
The Author Email: Xiao-Juan CHEN (chenxiaojuan@ime.ac.cn)