Journal of Infrared and Millimeter Waves, Volume. 43, Issue 2, 200(2024)

High-performance MOCVD-SiNx/AlN/GaN MIS-HEMTs with low noise and high linearity for millimeter waves

Jing YUAN1,2, Guan-Jun JING1,2, Jian-Chao WANG1,2, Liu WANG1,2, Run-Hua GAO1, Yi-Chuan ZHANG1, Yi-Xu YAO1,2, Ke WEI1, Yan-Kui LI1, and Xiao-Juan CHEN1、*
Author Affiliations
  • 1High-Frequency High-Voltage Device and Integrated Circuits R&D Center,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China
  • 2University of Chinese Academy of Sciences,Beijing 100029,China
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    Figures & Tables(8)
    (a) Simulation diagram of SiNx/AlN/GaN heterostructure;(b) SiNx/AlN/GaN 2DEG density and heterostructure energy band simulation diagram
    (a) Scanning electron microscopy(SEM) image of the two-finger device;(b) "T" gate structure of SEM
    Measurements of device surface:(a) fitting curve of Arrhenius analysis;(b) density distribution of interfacial Nss
    Basic electrical test of the device: (a) output I-V curves; (b) transfer and transconductance curves; (c) Vds = 6 V transconductance, first and second derivative curves of transconductance with respect to Vgs; (d) small signal test curve
    (a) Noise and gain curves of fixed bias devices; (b) variation curves of noise and gain with source-drain voltage
    (a) Measurements of linearity of devices at Vds = 3 V; (b) measurements of devices at Vds = 6 V
    • Table 1. Bias conditions and results for dual tone measurements

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      Table 1. Bias conditions and results for dual tone measurements

      Vds(V)ZloadOIP3(dBm)OIP3/Pdc(dB)Gain(dB)
      372.7+0.8*j28.57.38.2
      662.5+57.6*j32.411.28.4
    • Table 2. Comparison of performance of low noise devices reported for Millimeter-wave

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      View in Article

      Table 2. Comparison of performance of low noise devices reported for Millimeter-wave

      Paper

      Frequency

      /(GHz)

      NFmin/(dB)Gain/(dB)OIP3/(dBm)OIP3/Pdc
      20121360.977.5--
      2019630--3511.4
      2020730-12.73215
      20203302.25.0>31>8.2
      20228301.9104020
      this paper300.8510.7532.60>11
      401.079.97--
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    Jing YUAN, Guan-Jun JING, Jian-Chao WANG, Liu WANG, Run-Hua GAO, Yi-Chuan ZHANG, Yi-Xu YAO, Ke WEI, Yan-Kui LI, Xiao-Juan CHEN. High-performance MOCVD-SiNx/AlN/GaN MIS-HEMTs with low noise and high linearity for millimeter waves[J]. Journal of Infrared and Millimeter Waves, 2024, 43(2): 200

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    Paper Information

    Category: Research Articles

    Received: Jul. 14, 2023

    Accepted: --

    Published Online: Apr. 29, 2024

    The Author Email: Xiao-Juan CHEN (chenxiaojuan@ime.ac.cn)

    DOI:10.11972/j.issn.1001-9014.2024.02.009

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