High Power Laser and Particle Beams, Volume. 34, Issue 6, 063004(2022)

Optimization design and simulation of electric field at interface between substrate and electrode of photoconductive switch

Yan Luo, Lei Ding, Yi Zhao, Chongbin Yao, and Lichun Wang
Author Affiliations
  • Shanghai Aerospace Electronic and Communication Equipment Research Institute, Shanghai 201109, China
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    References(16)

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    [4] Cao P, Huang W, Guo H, et al. Performance of a vertical 4H-SiC photoconductive switch with AZO transparent conductive window and silver mirror reflector[J]. IEEE T Electron Dev, 65, 2047-2051(2018).

    [5] Daniel M, William S, Alan B, et al. High power lateral silicon carbide photoconductive semiconductor switches and investigation of degradation mechanisms[J]. IEEE T Plasma Sci, 43, 2021-2031(2015).

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    [13] [13] Cao Penghui. Research on vertical 4HSiC PCSS with transparent electrode[D]. Xian: Xidian University, 2017: 2040

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    Yan Luo, Lei Ding, Yi Zhao, Chongbin Yao, Lichun Wang. Optimization design and simulation of electric field at interface between substrate and electrode of photoconductive switch[J]. High Power Laser and Particle Beams, 2022, 34(6): 063004

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    Paper Information

    Category: High Power Microwave Technology

    Received: Aug. 20, 2021

    Accepted: Jan. 24, 2022

    Published Online: Jun. 2, 2022

    The Author Email:

    DOI:10.11884/HPLPB202234.210360

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