Strain in GaN Epi-Layer Grown by Hydride Vapor Phase Epitaxy

LIU Zhan-hui; XIU Xiang-qian; ZHANG Li-li; ZHANG Rong; ZHANG Ya-nan; SU Jing; XIE Zi-li; LIU Bin; SHAN Yun

doi:10.3964/j.issn.1000-0593(2013)08-2105-04

Spectroscopy and Spectral Analysis, Volume. 33, Issue 8, 2105(2013)

Strain in GaN Epi-Layer Grown by Hydride Vapor Phase Epitaxy

LIU Zhan-hui^1、*, XIU Xiang-qian², ZHANG Li-li², ZHANG Rong², ZHANG Ya-nan¹, SU Jing¹, XIE Zi-li², LIU Bin², and SHAN Yun³

Author Affiliations

¹[in Chinese]

²[in Chinese]

³[in Chinese]

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References(13)

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LIU Zhan-hui, XIU Xiang-qian, ZHANG Li-li, ZHANG Rong, ZHANG Ya-nan, SU Jing, XIE Zi-li, LIU Bin, SHAN Yun. Strain in GaN Epi-Layer Grown by Hydride Vapor Phase Epitaxy[J]. Spectroscopy and Spectral Analysis, 2013, 33(8): 2105

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Paper Information

Received: Sep. 20, 2012

Accepted: --

Published Online: Aug. 12, 2013

The Author Email: LIU Zhan-hui (zhanhuiliu@gmail.com)

DOI:10.3964/j.issn.1000-0593(2013)08-2105-04

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology