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Spectroscopy and Spectral Analysis, Volume. 33, Issue 8, 2105(2013)

Strain in GaN Epi-Layer Grown by Hydride Vapor Phase Epitaxy

LIU Zhan-hui1、*, XIU Xiang-qian2, ZHANG Li-li2, ZHANG Rong2, ZHANG Ya-nan1, SU Jing1, XIE Zi-li2, LIU Bin2, and SHAN Yun3
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  • 1[in Chinese]
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    LIU Zhan-hui, XIU Xiang-qian, ZHANG Li-li, ZHANG Rong, ZHANG Ya-nan, SU Jing, XIE Zi-li, LIU Bin, SHAN Yun. Strain in GaN Epi-Layer Grown by Hydride Vapor Phase Epitaxy[J]. Spectroscopy and Spectral Analysis, 2013, 33(8): 2105

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    Paper Information

    Received: Sep. 20, 2012

    Accepted: --

    Published Online: Aug. 12, 2013

    The Author Email: LIU Zhan-hui (zhanhuiliu@gmail.com)

    DOI:10.3964/j.issn.1000-0593(2013)08-2105-04

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology