Fig. 1. Schematic of Ge/Si bonded heterojunction

Fig. 2. Influence of ISD on dark current of Ge/Si heterojunction when T=300 K

Fig. 3. Influence of ISD on total carrier recombination rate at different interfaces when T=300 K and bias voltage is -5 V. (a) Ge/GeO₂ interface; (b) GeO₂/Si interface

Fig. 4. Influence of ISD on hole and electron concentrations in Ge and Si layers when T=300 K and bias voltage is -5 V. (a) Hole concentration; (b) electron concentration

Fig. 5. Influence of ISD on electric filed and charge density when T=300 K and bias voltage is -5 V. (a) Electric fields in Ge and Si layers; (b) electric field in GeO₂ layer; (c) charge density at Ge/Si interface

Fig. 6. Influence of ISD on electron and hole speeds in Ge layer when T=300 K and bias voltage is -5 V. (a) Electron speed; (b) hole speed

Fig. 7. Influence of ISD on total current and spectral response of Ge/Si heterojunction. (a) Total current; (b) spectral response

Fig. 8. Influence of ISD on frequency response and 3 dB bandwidth of Ge/Si heterojunction when T=300 K and bias voltage is -5 V. (a) Frequency response ; (b) 3 dB bandwidth

Fig. 9. Influence of bias voltage on Ge/Si heterojunction when T=300 K and ISD is 1×10¹⁰ cm^-2. (a)Frequency response; (b) 3 dB bandwidth; (c) electric field

Fig. 10. Influence of bias voltage on carrier speed when T=300 K and ISD is 1×10¹⁰ cm^-2. (a) Electron speed in Ge layer; (b) electron speed in Si layer; (c) hole speed in Ge layer; (d) hole speed in Si layer

Fig. 11. Influence of ISD on electron tunneling rate at Ge/Si bonded interface when T=300 K and bias voltage is -5 V