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Acta Optica Sinica, Volume. 40, Issue 19, 1931001(2020)

Effect of Interface State at Semiconductor-Insulator Contact Interface in Ge/Si Heterogeneous Bonding on Photoelectric Transport Characteristics of Heterojunction

Shengquan He1, Haipeng Ke2、**, Lian Yan3, Xinglian Li1, Shaoying Ke1、*, and Dongke Li3
Author Affiliations
  • 1College of Physics and Information Engineering, Minnan Normal University, Zhangzhou, Fujian 363000, China
  • 2Zhangzhou First Vocational Secondary School, Zhangzhou, Fujian 363000, China
  • 3Huaiyin Normal University, Huaian, Jiangsu 223300, China
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    Article index updated: Mar. 10, 2025

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    Shengquan He, Haipeng Ke, Lian Yan, Xinglian Li, Shaoying Ke, Dongke Li. Effect of Interface State at Semiconductor-Insulator Contact Interface in Ge/Si Heterogeneous Bonding on Photoelectric Transport Characteristics of Heterojunction[J]. Acta Optica Sinica, 2020, 40(19): 1931001

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    Paper Information

    Category: Thin Films

    Received: May. 11, 2020

    Accepted: Jun. 23, 2020

    Published Online: Sep. 19, 2020

    The Author Email: Ke Haipeng (kehaipeng@163.com), Ke Shaoying (syke@mnnu.edu.cn)

    DOI:10.3788/AOS202040.1931001

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology