Journal of Terahertz Science and Electronic Information Technology , Volume. 23, Issue 1, 40(2025)

High sensitivity terahertz detectors based on the InP/InGaAs Schottky Barrier Diodes

ZHOU Jingtao, JIN Zhi*, SU Yongbo, SHI Jingyuan, DING Wuchang, ZHANG Dayong, YANG Feng, and LIU Tong
Author Affiliations
  • Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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    References(11)

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    [4] [4] SEMENOV A, COJOCARI O, HBERS H W, et al. Application of zero-bias quasi-optical Schottky-diode detectors for monitoring short-pulse and weak terahertz radiation[J]. IEEE Electron Device Letters, 2010, 31(7): 674-676. doi: 10.1109/LED.2010.2048192.

    [5] [5] SILES J V, GRAJAL J, DI-CARLO A. Design of submillimeter Schottky mixers under flat-band conditions using an improved drift-diffusion model[J]. IEEE Microwave and Wireless Components Letters, 2009, 19(3): 167-169. doi: 10.1109/LMWC.2009.2013741.

    [6] [6] THOMAS B, MAESTRINI A, GILL J, et al. A broadband 835~900 GHz fundamental balanced mixer based on monolithic GaAs membrane Schottky diodes[J]. IEEE Transactions on Microwave Theory and Techniques, 2010(58): 1917-1924. doi: 10.1109/TMTT.2010.2050181.

    [7] [7] CHATTOPADHYAY G. Technology, capabilities, and performance of low power terahertz sources[J]. IEEE Transactions on Terahertz Science and Technology, 2011, 1(1): 33-53. doi: 10.1109/TTHZ.2011.2159561.

    [8] [8] LEE C, WARD J, LIN R, et al. A wafer-level diamond bonding process to improve power handling capability of submillimeter-wave Schottky diode frequency multiplies[C]//2009 IEEE MTT-S International Microwave Symposium Digest. Boston, MA, USA: IEEE, 2009: 957-960. doi: 10.1109/MWSYM.2009.5165857.

    [9] [9] GRIFFITHS P R, HOMES C C. Instrumentation for far-infrared spectroscopy[EB/OL]. Handbook of Vibrational Spectroscopy (2006-08-15). https://onlinelibrary.wiley.com/doi/abs/10.1002/0470027320.s0207. doi: 10.1002/0470027320.s0207.

    [10] [10] SZE S M. Physics of semiconductor devices[M]. 2nd ed. New York: John-Wiley & Sons, 1981.

    [11] [11] ZHOU Jingtao, GE Ji, YANG Chengyue, et al. Planar InP-based Schottky barrier diodes for terahertz applications[J]. Journal of Semiconductors, 2013, 4(6): 064003. doi: 10.1088/1674-4926/34/6/064003.

    [12] [12] LIU Xiaoyu, ZHANG Yong, XIA Dejiao, et al. A high-sensitivity terahertz detector based on a low-barrier Schottky diode[J]. Chinese Physics Letters, 2017, 34(7): 070701. doi: 10.1088/0256-307X/34/7/070701.

    [13] [13] REN Tianhao, ZHANG Yong, YAN Bo, et al. A high performance terahertz waveguide detector based on a low-barrier diode[J]. Chinese Physics Letters, 2016, 33(6): 060701. doi: 10.1088/0256-307X/33/6/060701.

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    ZHOU Jingtao, JIN Zhi, SU Yongbo, SHI Jingyuan, DING Wuchang, ZHANG Dayong, YANG Feng, LIU Tong. High sensitivity terahertz detectors based on the InP/InGaAs Schottky Barrier Diodes[J]. Journal of Terahertz Science and Electronic Information Technology , 2025, 23(1): 40

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    Paper Information

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    Received: Aug. 22, 2024

    Accepted: Feb. 25, 2025

    Published Online: Feb. 25, 2025

    The Author Email: JIN Zhi (jinzhi@ime.ac.cn)

    DOI:10.11805/tkyda2024398

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