High sensitivity terahertz detectors based on the InP/InGaAs Schottky Barrier Diodes

ZHOU Jingtao; JIN Zhi; SU Yongbo; SHI Jingyuan; DING Wuchang; ZHANG Dayong; YANG Feng; LIU Tong

doi:10.11805/tkyda2024398

Journal of Terahertz Science and Electronic Information Technology , Volume. 23, Issue 1, 40(2025)

High sensitivity terahertz detectors based on the InP/InGaAs Schottky Barrier Diodes

ZHOU Jingtao, JIN Zhi^*, SU Yongbo, SHI Jingyuan, DING Wuchang, ZHANG Dayong, YANG Feng, and LIU Tong

Author Affiliations

Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

show less

Abstract Get PDF(in Chinese)

Figures & Tables(0)

Tools

Get Citation

Copy Citation Text

ZHOU Jingtao, JIN Zhi, SU Yongbo, SHI Jingyuan, DING Wuchang, ZHANG Dayong, YANG Feng, LIU Tong. High sensitivity terahertz detectors based on the InP/InGaAs Schottky Barrier Diodes[J]. Journal of Terahertz Science and Electronic Information Technology , 2025, 23(1): 40

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category:

Received: Aug. 22, 2024

Accepted: Feb. 25, 2025

Published Online: Feb. 25, 2025

The Author Email: JIN Zhi (jinzhi@ime.ac.cn)

DOI:10.11805/tkyda2024398

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology