Development of Low Wavefront Distortion Dichroic Mirror for Super-resolution Imaging

Table 1. The specifications of dichroic beamsplitter
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Table 1. The specifications of dichroic beamsplitter
Angle of incidence Dimensions Transmission band Reflection band Reflected PV
45° 40 mm×30 mm×2 mm 504~544 nm 588~800 nm 450~491 nm 556~566 nm <0.25λ
T_avg>95% T_avg>95% T_abs<5% T_abs<5% @632.8 nm

Table 2. Optimal process parameters of Ta₂O₅，Nb₂O₅，SiO₂
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Table 2. Optimal process parameters of Ta₂O₅，Nb₂O₅，SiO₂
Parameters Materials MF power/W Argon flow Oxygen flow
PVD1 Ta₂O₅ 5 000 25.0 Sccm 35~50 Sccm
PVD1 Nb₂O₅ 5 000 25.0 Sccm 35~50 Sccm
PVD2 SiO₂ 5 000 25.0 Sccm 10~15 Sccm

Table 3. Reflected PV values before and after coating 2 000 nm single-layer Ta₂O₅，Nb₂O₅，SiO₂ materials

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Table 3. Reflected PV values before and after coating 2 000 nm single-layer Ta₂O₅，Nb₂O₅，SiO₂ materials

Coating Materials	JGS1（Reflected PV）@632.8 nm		K9（Reflected PV）@632.8 nm
Coating Materials	Before coating	After coating	Before coating	After coating
2 000 nm Ta₂O₅	-0.121λ	-0.05λ	-0.132λ	0.179λ
2 000 nm Nb₂O₅	-0.115λ	0.363λ	-0.111λ	0.681λ
2 000 nm SiO₂	-0.134λ	1.634λ	-0.152λ	1.651λ

Table 4. Reflected PV and ΔPV values of Ta₂O₅，Nb₂O₅，and SiO₂ after annealing at different temperatures

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Table 4. Reflected PV and ΔPV values of Ta₂O₅，Nb₂O₅，and SiO₂ after annealing at different temperatures

Annealing temperature	JGS1（Reflected PV）@632.8 nm			JGS1（Reflected ΔPV）@632.8 nm
Annealing temperature	Ta₂O₅	Nb₂O₅	SiO₂	Ta₂O₅	Nb₂O₅	SiO₂
Unannealed	-0.050λ	0.363λ	1.634λ	0.071λ	0.518λ	1.768λ
200 ℃	-0.292λ	0.345λ	1.637λ	-0.171λ	0.5λ	1.771λ
250 ℃	-0.493λ	0.312λ	1.628λ	-0.372λ	0.467λ	1.762λ
300 ℃	-0.641λ	0.299λ	1.611λ	-0.520λ	0.454λ	1.745λ
350 ℃	-0.753λ	0.287λ	1.555λ	-0.632λ	0.442λ	1.689λ
400 ℃	-0.943λ	0.277λ	1.542λ	-0.822λ	0.432λ	1.676λ

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Hongyu HUANG, Ruisheng WANG, Xiaomin LIN, Xianpeng LIANG, Ming DONG, Quan YUAN. Development of Low Wavefront Distortion Dichroic Mirror for Super-resolution Imaging[J]. Acta Photonica Sinica, 2025, 54(1): 0111002

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Paper Information

Category:

Received: Jul. 22, 2024

Accepted: Sep. 30, 2024

Published Online: Mar. 5, 2025

The Author Email: Hongyu HUANG (huanghongyu@hb-optical.com.cn)

DOI:10.3788/gzxb20255401.0111002

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. The specifications of dichroic beamsplitter

Table 1. The specifications of dichroic beamsplitter

Table 2. Optimal process parameters of Ta2O5，Nb2O5，SiO2

Table 2. Optimal process parameters of Ta2O5，Nb2O5，SiO2

Table 3. Reflected PV values before and after coating 2 000 nm single-layer Ta2O5，Nb2O5，SiO2 materials

Table 3. Reflected PV values before and after coating 2 000 nm single-layer Ta2O5，Nb2O5，SiO2 materials

Table 4. Reflected PV and ΔPV values of Ta2O5，Nb2O5，and SiO2 after annealing at different temperatures

Table 4. Reflected PV and ΔPV values of Ta2O5，Nb2O5，and SiO2 after annealing at different temperatures

Table 2. Optimal process parameters of Ta₂O₅，Nb₂O₅，SiO₂

Table 2. Optimal process parameters of Ta₂O₅，Nb₂O₅，SiO₂

Table 3. Reflected PV values before and after coating 2 000 nm single-layer Ta₂O₅，Nb₂O₅，SiO₂ materials

Table 3. Reflected PV values before and after coating 2 000 nm single-layer Ta₂O₅，Nb₂O₅，SiO₂ materials

Table 4. Reflected PV and ΔPV values of Ta₂O₅，Nb₂O₅，and SiO₂ after annealing at different temperatures

Table 4. Reflected PV and ΔPV values of Ta₂O₅，Nb₂O₅，and SiO₂ after annealing at different temperatures