Chinese Journal of Lasers, Volume. 50, Issue 18, 1803001(2023)
Influence of Passivation Layer and P‑Type Base Structure Optimization on Charge Collection Efficiency of Electron Bombardment Active Pixel Sensor
Fig. 1. EBAPS structure and electrons’ multiplication and charge collection process. (a) EBAPS structure; (b) electrons’ multiplication and charge collection process
Fig. 2. Simulation results when passivation layer material is Al2O3. (a) Charge collection efficiency (CCE) distribution map in 5×5 pixel area; (b) motion trace of incident electron on X-Z plane; (c) distribution probability of secondary electrons
Fig. 3. Simulation results when passivation layer material is SiO2. (a) Charge collection efficiency (CCE) distribution map in 5×5 pixel area; (b) motion trace of incident electron on X-Z plane; (c) distribution probability of secondary electrons
Fig. 4. CCE under different passivation layer thicknesses.(a) Passivation layer thickness is 25 nm; (b) passivation layer thickness is 50 nm; (c) passivation layer thickness is 75 nm; (d) passivation layer thickness is 100 nm
Fig. 5. Distribution probability of secondary electrons under different passivation layer thicknesses. (a) Passivation layer thickness is 25 nm; (b) passivation layer thickness is 50 nm; (c) passivation layer thickness is 75 nm; (d) passivation layer thickness is 100 nm
Fig. 6. CCE at different incident electron energies. (a) E0=2 keV; (b) E0=4 keV; (c) E0=6 keV
Fig. 7. Distribution probability of secondary electrons under different incident electron energies. (a) E0=2 keV; (b) E0=4 keV; (c) E0=6 keV
Fig. 8. Charge collection efficiency under different P-type base thicknesses. (a) Base thickness is 5 μm; (b) base thickness is 10 μm; (c) base thickness is 15 μm; (d) base thickness is 20 μm
Fig. 9. Distribution probability of secondary electrons under different P-type base thicknesses. (a) Base thickness is 5 μm; (b) base thickness is 10 μm; (c) base thickness is 15 μm; (d) base thickness is 20 μm
Fig. 10. Charge collection efficiency of 5×5 pixels area at different doping concentrations. (a) at different doping concentrations is 1015 cm-3; (b) at different doping concentrations is 1016 cm-3; (c) at different doping concentrations is 1017 cm-3; (d) at different doping concentrations is 1018 cm-3; (e) at different doping concentrations is 5×1018 cm-3; (f) at different doping concentrations is 1019 cm-3
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Yuanyuan Song, De Song, Ye Li, Weijun Chen, Chunyang Liu. Influence of Passivation Layer and P‑Type Base Structure Optimization on Charge Collection Efficiency of Electron Bombardment Active Pixel Sensor[J]. Chinese Journal of Lasers, 2023, 50(18): 1803001
Category: Materials
Received: Aug. 16, 2022
Accepted: Nov. 21, 2022
Published Online: Aug. 28, 2023
The Author Email: De Song (songde_cust@163.com), Chunyang Liu (liucy169@nenu.edu.cn)