Laser & Optoelectronics Progress, Volume. 61, Issue 23, 2300002(2024)

Research Progress on Polishing Hard and Brittle Silicon-Carbide Material Surfaces Using Laser Technology

Zirui Wang1, Cheng Fan1, Dongmei Huang2, Yongguang Wang1、*, Dong Zhao1, and Zifeng Ni3
Author Affiliations
  • 1School of Mechanical and Electric Engineering, Soochow University, Suzhou 215021, Jiangsu , China
  • 2Suzhou Jiangjin Automation Technology Co., Ltd., Suzhou 215100, Jiangsu , China
  • 3School of Mechanical Engineering, Jiangnan University, Wuxi 214122, Jiangsu , China
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    Figures & Tables(12)
    Crystal properties and applications of the third-generation semiconductor materials[1]
    Main variables affecting laser processing[36]
    Comparison between two polishing technologies[40]. (a) Long-pulse laser thermal polishing; (b) short-pulse laser cold polishing
    Surface morphologies of the 6H-SiC before and after laser polishing[44]
    SiC surfaces irradiated by 5 pulse with different wavelengths[53]. (a) 515 nm; (b) 1030 nm
    MRR and surface roughness after polishing of single crystal SiC using different methods in previous studies[26-27,34,52,61,66]
    Schematic illustration of underwater femtosecond laser polishing processing[71]
    LIMJAA technology[33]. (a) Schematic of LIMJAA process; (b) photograph of laser-induced microjet
    Concept of the hybrid CO2 laser-polishing process[34]. (a) Laser machining; (b) mechanical polishing; (c) laser-assisted polishing
    Material removal mechanism of hybrid laser-assisted polishing process[34]
    • Table 1. Comparison of common polishing technologies for SiC materials

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      Table 1. Comparison of common polishing technologies for SiC materials

      ItemCMPIon beam polishingLaser polishingLaser-assisted CMP
      MechanismMechanical action + chemical reactionsIon beam sputtering removalThermal/photochemical actionThermal/photochemical action + mechanical action + chemical reactions
      CostHighHighMediumLow
      PrecisionHighMediumMediumHigh
      EfficiencyMediumLowHighHigh

      Environmental

      protection

      MediumGoodGoodRelatively good
    • Table 2. Comparison of previous research on polishing SiC materials

      View table

      Table 2. Comparison of previous research on polishing SiC materials

      Ref.Research purposePolishing abrasiveParticle size /μmRoughness /nmMRR /(μm/min)
      58RoughnessDiamond1‒1021.6→10.7~0.95
      59RoughnessCeO2353→134.30Not rated
      60Material removal characteristicsDiamond47.50.45
      61Material removal characteristicsFe, Al2O30.5, 0.050.160.74
      62MicrostructureDiamond1‒33.02‒8.38Not rated
      63Single-grain simulationDiamond0.5152Not rated
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    Zirui Wang, Cheng Fan, Dongmei Huang, Yongguang Wang, Dong Zhao, Zifeng Ni. Research Progress on Polishing Hard and Brittle Silicon-Carbide Material Surfaces Using Laser Technology[J]. Laser & Optoelectronics Progress, 2024, 61(23): 2300002

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    Paper Information

    Category: Reviews

    Received: Mar. 20, 2024

    Accepted: Apr. 3, 2024

    Published Online: Nov. 26, 2024

    The Author Email: Yongguang Wang (wangyg@suda.edu.cn)

    DOI:10.3788/LOP240928

    CSTR:32186.14.LOP240928

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