Laser & Optoelectronics Progress, Volume. 61, Issue 23, 2300002(2024)
Research Progress on Polishing Hard and Brittle Silicon-Carbide Material Surfaces Using Laser Technology
Fig. 1. Crystal properties and applications of the third-generation semiconductor materials[1]
Fig. 3. Comparison between two polishing technologies[40]. (a) Long-pulse laser thermal polishing; (b) short-pulse laser cold polishing
Fig. 5. SiC surfaces irradiated by 5 pulse with different wavelengths[53]. (a) 515 nm; (b) 1030 nm
Fig. 7. Schematic illustration of underwater femtosecond laser polishing processing[71]
Fig. 8. LIMJAA technology[33]. (a) Schematic of LIMJAA process; (b) photograph of laser-induced microjet
Fig. 9. Concept of the hybrid CO2 laser-polishing process[34]. (a) Laser machining; (b) mechanical polishing; (c) laser-assisted polishing
Fig. 10. Material removal mechanism of hybrid laser-assisted polishing process[34]
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Zirui Wang, Cheng Fan, Dongmei Huang, Yongguang Wang, Dong Zhao, Zifeng Ni. Research Progress on Polishing Hard and Brittle Silicon-Carbide Material Surfaces Using Laser Technology[J]. Laser & Optoelectronics Progress, 2024, 61(23): 2300002
Category: Reviews
Received: Mar. 20, 2024
Accepted: Apr. 3, 2024
Published Online: Nov. 26, 2024
The Author Email: Yongguang Wang (wangyg@suda.edu.cn)
CSTR:32186.14.LOP240928