With the rapid advancement of the semiconductor industry, there is a growing demand for improved polishing quality and efficiency for third-generation comprehensive band-gap power semiconductor materials, particularly silicon carbide (SiC). As a result, it is crucial to explore efficient surface manufacturing technologies to meet the urgent needs of the industry. This study compares common polishing techniques for SiC materials and summarizes the mechanisms of laser polishing and various laser surface modification-assisted polishing methods. Additionally, recent research progress in laser-based surface polishing technology for SiC materials is reviewed, focusing on the challenges posed by the material's high hardness, brittleness, and chemical inertness. Laser-based surface polishing offers several advantages, including efficiently removing SiC surface materials, avoiding subsurface damage, and facilitating industrial automation. Two promising development directions are summarized for highly efficient and nondestructive ultraprecision polishing technology for SiC materials in the current semiconductor industry. One of the development directions involves combining laser technology with chemical mechanical polishing (CMP). The other focuses on integrating multi-energy fields with laser polishing or laser-assisted CMP technology. Finally, the potential development of laser polishing and laser-assisted CMP technology, along with the underlying mechanisms, is discussed. This study provides a novel perspective and valuable reference for the highly effective and high-quality polishing of third-generation comprehensive band-gap power semiconductor materials, such as SiC, with substantial implications for the industry.