GaN-based p–i–n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substrates

Hongjuan Huang; Dawei Yan; Guosheng Wang; Feng Xie; Guofeng Yang; Shaoqing Xiao; Xiaofeng Gu

doi:10.3788/col201412.092301

Chinese Optics Letters, Volume. 12, Issue 9, 092301(2014)

GaN-based p–i–n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substrates

Hongjuan Huang¹, Dawei Yan¹, Guosheng Wang², Feng Xie², Guofeng Yang¹, Shaoqing Xiao¹, and Xiaofeng Gu¹

¹Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, Jiangsu, China

²The 38th Research Institute of China Electronics Technology Group Corporation, Hefei 230088, China

show less

References(17)

[1] [1] M. Razeghi, Proc. IEEE 90, 1006 (2002).

[2] [2] H. Jiang and T. Egawa, Appl. Phys. Lett. 90, 121121 (2007).

[3] [3] J. Y. Duboz, N. Grandjean, F. Omnes, M. Mosca, and J. L. -Reverchon, Appl. Phys. Lett. 86, 063511 (2005).

[4] [4] Y. Zhang, S. C. Shen, H. J. Kim, S. Choi, J. H. Ryou, R. D. Dupuis, and B. Narayan, Appl. Phys. Lett. 94, 221109 (2009).

[5] [5] F. Xie, H. Lu, D. J. Chen, X. Q. Xiu, H. Zhao, R. Zhang, and Y. D. Zheng, IEEE Electron. Device Lett. 32, 1260 (2011).

[6] [6] T. Tut, T. Yelboga, E. Ulker, and E. Ozbay, Appl. Phys. Lett. 92, 103502 (2008).

[7] [7] J. K. Sheu, M. L. Lee, C. J. Tun, and S. W. Lin, Appl. Phys. Lett. 88, 043506 (2006).

[8] [8] Y. Z. Chiou, Y. G. Lin, and T. K. Ko, Semicond. Sci. Technol. 24, 055004 (2009).

[9] [9] D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, IEEE Photon. Technol. Lett. 17, 288 (2005).

[10] [10] S. J. Chang, Y. D. Jhou, Y. C. Lin, S. L. Wu, C. H. Chen, T. C. Wen, and L. W. Wu, IEEE Photon. Technol. Lett. 20, 1866 (2008).

[11] [11] G. S. Wang, H. Lu, D. J Chen, F. F. Ren, R. Zhang, and Y. D. Zheng, IEEE Photon. Technol. Lett. 25, 652 (2013).

[12] [12] B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaar, and J. S. Speck, Appl. Phys. Lett. 68, 643 (1996).

[13] [13] D. W. Yan, H. Lu, D. J. Chen, R. Zhang, and Y. D. Zheng, Appl. Phys. Lett. 96, 083504 (2010).

[14] [14] J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, W. R. Chen, K. C. Huang, Y. C. Cheng, and W. J. Lin, IEEE Photon. Technol. Lett. 20, 1255 (2008).

[15] [15] T. Li, D. J. H. Lambert, M. M. Wong, C. J. Collins, B. Yang, A. L. Beck, U. Chowdhury, R. D. Durpuis, and J. C. Campbell, Opt. Quant. Electron. 37, 538 (2001).

[16] [16] D. V. Kuksenkov, H. Temkin, A. Osinsky, R. Gaska and M. A. Khan, J. Appl. Phys. 83, 2142 (1998).

[17] [17] J. L. Hou, S. J. Chang, M. C. Chen, C. H. Liu, T. J. Hsueh, J. K. Sheu, and S. G. Li, IEEE Trans. Electron. Devices 60, 1178 (2013).

CLP Journals

[1] Xingye Zhou, Jia Li, Weili Lu, Yuangang Wang, Xubo Song, Shunzheng Yin, Xin Tan, Yuanjie Lü, Hongyu Guo, Guodong Gu, Zhihong Feng, "Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection," Chin. Opt. Lett. 16, 060401 (2018)

[2] Xiaodan Wang, Yajuan Mo, Xionghui Zeng, Hongmin Mao, Jianfeng Wang, Ke Xu, "Investigation of low-temperature cathodoluminescence mechanism of Er-doped GaN thick films by ion implantation," Chin. Opt. Lett. 14, 051602 (2016)

[3] Yafan Shi, Zhaohui Li, Baicheng Feng, Peiqin Yan, Bingcheng Du, Hui Zhou, Haifeng Pan, Guang Wu, "Enhanced solar-blind ultraviolet single-photon detection with a Geiger-mode silicon avalanche photodiode," Chin. Opt. Lett. 14, 030401 (2016)

[4] Jiliang Qin, Zhihui Yan, Meiru Huo, Xiaojun Jia, Kunchi Peng, "Design of low-noise photodetector with a bandwidth of 130 MHz based on transimpedance amplification circuit," Chin. Opt. Lett. 14, 122701 (2016)

[5] Yang Shen, Liang Chen, Shuqin Zhang, Yunsheng Qian, "Quantum efficiency decay mechanism of NEA GaN photocathode: A first-principles research," Chin. Opt. Lett. 13, 100401 (2015)

[6] Chunhong Zeng, Wenkui Lin, Tao He, Yukun Zhao, Yuhua Sun, Qi Cui, Xuan Zhang, Shulong Lu, Xuemin Zhang, Yameng Xu, Mei Kong, Baoshun Zhang, "Ultraviolet-infrared dual-color photodetector based on vertical GaN nanowire array and graphene," Chin. Opt. Lett. 18, 112501 (2020)

[7] Xiang Li, Xiaodan Wang, Hai Ma, Feifei Chen, Xionghui Zeng, "White light emission from Er, Pr co-doped AlN films," Chin. Opt. Lett. 17, 111602 (2019)

Cited By

[4] Yu Fang, Zhengguo Xiao, Xingzhi Wu, Feng Zhou, Junyi Yang, Yong Yang, Yinglin Song. Optical nonlinearities and ultrafast all-optical switching of m-plane GaN in the near-infrared. Applied Physics Letters, 106, 251903(2015).

Tools

Get Citation

Copy Citation Text

Hongjuan Huang, Dawei Yan, Guosheng Wang, Feng Xie, Guofeng Yang, Shaoqing Xiao, Xiaofeng Gu, "GaN-based p–i–n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substrates," Chin. Opt. Lett. 12, 092301 (2014)

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category:

Received: Apr. 18, 2014

Accepted: Jun. 3, 2014

Published Online: Aug. 21, 2014

The Author Email:

DOI:10.3788/col201412.092301

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology