GaN-based p–i–n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substrates

Hongjuan Huang; Dawei Yan; Guosheng Wang; Feng Xie; Guofeng Yang; Shaoqing Xiao; Xiaofeng Gu

doi:10.3788/col201412.092301

Chinese Optics Letters, Volume. 12, Issue 9, 092301(2014)

GaN-based p–i–n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substrates

Hongjuan Huang¹, Dawei Yan¹, Guosheng Wang², Feng Xie², Guofeng Yang¹, Shaoqing Xiao¹, and Xiaofeng Gu¹

¹Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, Jiangsu, China

²The 38th Research Institute of China Electronics Technology Group Corporation, Hefei 230088, China

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Hongjuan Huang, Dawei Yan, Guosheng Wang, Feng Xie, Guofeng Yang, Shaoqing Xiao, Xiaofeng Gu, "GaN-based p–i–n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substrates," Chin. Opt. Lett. 12, 092301 (2014)

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Paper Information

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Received: Apr. 18, 2014

Accepted: Jun. 3, 2014

Published Online: Aug. 21, 2014

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DOI:10.3788/col201412.092301

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology