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Chinese Journal of Lasers, Volume. 39, Issue 5, 502010(2012)

MOCVD Growth of AlGaInAs/AlGaAs Quantum Well for 852 nm Laser Diodes Studied by Reflectance Anisotropy Spectroscopy

Xu Huawei1,2、*, Ning Yongqiang1, Zeng Yugang1, Zhang Xing1, Zhang Jianwei1,2, Zhang Jian1,2, and Zhang Lisen1,2
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    Xu Huawei, Ning Yongqiang, Zeng Yugang, Zhang Xing, Zhang Jianwei, Zhang Jian, Zhang Lisen. MOCVD Growth of AlGaInAs/AlGaAs Quantum Well for 852 nm Laser Diodes Studied by Reflectance Anisotropy Spectroscopy[J]. Chinese Journal of Lasers, 2012, 39(5): 502010

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    Paper Information

    Category: Laser physics

    Received: Dec. 29, 2011

    Accepted: --

    Published Online: Apr. 13, 2012

    The Author Email: Huawei Xu (xuhwciomp@163.com)

    DOI:10.3788/cjl201239.0502010

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology