Chinese Journal of Lasers, Volume. 47, Issue 7, 701003(2020)

Single-Mode Semiconductor Nanowire Lasers

Pian Sijie1,2, Salman Ullah1,2, Yang Qing1,2, and Ma Yaoguang1,2
Author Affiliations
  • 1State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Joint International Research Laboratory of Photonics, Zhejiang University, Hangzhou, Zhejiang 310027, China
  • 2Zhijiang Lab, Hangzhou, Zhejiang 310000, China
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    Figures & Tables(13)
    Schematic of refractive index profile of semiconductor nanowire
    Mode characteristics of semiconductor nanowires. Scale bar: 50 nm. (a) Electric fields of HE11, TE01, and TM01 modes in freestanding ZnO nanowire with a radius of 80 nm at 380 nm in the equivalent of a circular waveguide; (b) propagation constant of the mode in the ZnO nanowire varies with the diameter of the ZnO nanowire at 380 nm. ω is the angular frequency, R is the radius of the nanowire, and c is the speed of light in vacuum; (c) electri
    Schematics of output mode characteristics of semiconductor nanowire lasers with different cavity lengths. (a) Schematic of laser output mode characteristics with a long cavity. Inset shows the corresponding cavity structure; (b) schematic of laser output mode characteristics with a short cavity. Inset shows the corresponding cavity structure
    Single-mode nanobelt lasers and their output characteristics[63]. (a) SEM image of CdSe nanobelts with obvious bumps; (b) optical microscope image of nanobelt lateral emission laser; (c) lateral laser spectrum of nanobelt laser; (d) laser emission intensity and line width as functions of pump power
    Evanescent-wave pumped nanowire laser with core-shell nano structure and its output characteristics[51]. (a) Schematic of core-shell structure (left) and its SEM image; (b) emission spectra of the nanowire. Inset shows the CCD images of the nanowire laser and its laser pattern; (c) pump energy dependent intensity and linewidth
    Structure and spectral characteristics of InGaA/InGaP one-dimensional nanowire array lasers[70-71]. (a) 1100 nm band one-dimensional nanowire array laser structure and its output spectra. Inset shows L-L curve of the laser peak[70]; (b) structure of one-dimensional nanowire array laser at telecom-wavelengths and its output spectra[<xref ref-type="bibr" r
    Schematic of Vernier effect of coupled cavities and typical coupled cavities. (a) Schematic of Vernier effect; (b) coupled cavity with loop mirror; (c) X-shape cavity; (d) cleaved-coupled cavity
    Nanowire lasers with loop mirror coupling cavity and their output characteristics[26]. (a) SEM image and corresponding output spectra of laser without loop mirror, with single loop mirror, and with double loops; (b) L-L curves of laser peaks of three lasers
    Cleaved-coupled nanowire laser and its spectral characteristics[24]. (a) SEM image of cleaved-coupled nanowire laser; (b) laser spectrum of coupled cavity and single separated nanowire subcavity
    Schematic of FP-WGM coupled cavity nanowire laser and its spectral characteristics[83]. (a) Schematic of FP-WGM coupled cavity nanowire laser; (b) reversible tuning characteristics of laser and corresponding spectra
    DFB nanowire lasers[67]. (a) Schematic of the DFB nanowire lasers, in which the nanowires have three different angular orientations; (b) SEM image of a single nanowire placed on DFB substrate; (c) laser spectrum of nanowires with different angle orientations
    Laser spectrum of the same semiconductor nanowire laser with different pump positions. Inset shows the CCD image of corresponding nanowire laser[68]
    • Table 1. Single-mode semiconductor nanowire lasers

      View table

      Table 1. Single-mode semiconductor nanowire lasers

      Single-modestrategyMaterialCavity length/μmThresholdWavelength/nmLinewidth/nmSMSR/dB
      Short cavity[61]GaN4.7231 kW·cm-23710.1218
      Short cavity[62](Al)GaAs6207 μJ·cm-28831.8-
      Short cavity[51](Al)GaAs4--690 nJ@868.62 nm852--8821.8@868.62 nm-
      Short cavity[46]CdSSe14~10 kW·cm-2650-14
      Short cavity[63]CdSe518 μJ·cm-27120.18-
      Short cavity[70]InGaAs/InGaP~3.5100 μJ·cm-211001.9-
      Short cavity[71]InGaAs/InGaP~3.295 μJ·cm-2@1320 nm1150--14702.813@1320 nm
      Coupled cavity[26]CdSeTotal length: 7534.4 μJ·cm-27380.1011.3
      Coupled cavity[65]CdSe89 (cavity 1)80 (cavity 2)120 μJ·cm-27340.1111.6
      Coupled cavity[54]GaN7.6 (cavity 1)8.0 (cavity 1)874 kW·cm-23700.1415.6
      Coupled cavity[24]GaN3.86 (cavity 1)5.14 (cavity 2)-3680.6-
      Coupled Cavity[66]GaAsSb106 kW·cm-2(75 μJ·cm-2)@950 nm890--9900.76@950 nm-
      DFB[67]GaN5~300 kW·cm-2369-17
      Pump point[68]GaN34.240 kW·cm-2375--
      DBR/pump point[69]GaN45~8000 kW·cm-2@370 nm3693750.50.88.5@370 nm
      Mode-dependent loss[53]GaN5.3276 kW·cm-23690.1217.4
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    Pian Sijie, Salman Ullah, Yang Qing, Ma Yaoguang. Single-Mode Semiconductor Nanowire Lasers[J]. Chinese Journal of Lasers, 2020, 47(7): 701003

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    Paper Information

    Special Issue:

    Received: Mar. 20, 2020

    Accepted: --

    Published Online: Jul. 10, 2020

    The Author Email:

    DOI:10.3788/CJL202047.0701003

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