Journal of Semiconductors, Volume. 46, Issue 4, 042703(2025)
Molecular sieves assisted chemical vapor deposition preparation of high-κ dielectric m-ZrO2 nanosheets
Fig. 1. (Color online) (a) Schematic diagram of two-dimensional ZrO2 nanosheets prepared by one-step CVD. The lower part shows the formation of m-ZrO2 at the atomic level. (b) Optical image of ZrO2 grown on a silicon substrate. Scale bar: 20 μm. (c) Raman spectra of m-ZrO2 nanosheets. (d) SEM image of ZrO2 nanosheet at 18 000x magnification. Scale bar: 1 μm. (e) AFM image and corresponding height maps of ZrO2 nanosheets. Scale bar: 1 μm.
Fig. 2. (Color online) (a) XRD spectra of ZrO2 nanosheets. (b) XPS broad spectra of ZrO2 nanosheets. (c) XPS narrow spectra of Zr 3d. (d) XPS narrow spectra of O 1s.
Fig. 3. (Color online) (a) TEM. Scale bar: 500 nm. (b) HRTEM. Scale bar: 2 nm. (c) SEAD. Scale bar: 2 nm−1. (d) EDS of ZrO2 nanosheets.
Fig. 4. (Color online) (a) Optical image and (b) Raman spectra of ZrS2 without the introduction of 5A molecular sieves. Scale bar: 10 μm. (c) Optical image and (d) Raman spectra of ZrO2 with the incorporation of 5A molecular sieves. Scale bar: 30 μm. (e) Optical images of ZrO2 grown on the SiO2/Si substrate at different deposition temperatures (780/830/880 °C). Scale bar: 20 μm.
Fig. 5. (Color online) (a) The schematic of MoS2−ZrO2 heterojunction FET. (b) Optical picture of the prepared FET, with the corresponding AFM image in the upper left corner. Scale bar: 10 μm. (c) Output characteristic curve of FET. (d) Transfer characteristic curve of FET.
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Ting Lu, Zhuojun Duan, Ling Zhang, Yuanyuan Jin, Huimin Li, Song Liu. Molecular sieves assisted chemical vapor deposition preparation of high-κ dielectric m-ZrO2 nanosheets[J]. Journal of Semiconductors, 2025, 46(4): 042703
Category: Research Articles
Received: Sep. 18, 2024
Accepted: --
Published Online: May. 21, 2025
The Author Email: Zhuojun Duan (ZJDuan), Song Liu (SLiu)