[1] Zhou Shi-chun[M]. Introduction to Advanced Infrared Optoelectronic Engineering(2014).

[2] Shen Xue-chu[M]. Optical properties of semiconductors, 44-117,(1992).

[3] Yang Jian-rong[M]. Material Physics and Technology of Mercury Cadmium Telluride, 11-29,(2012).

[4] Tennant W E, Arias J M, Bajaj J. HgCdTe at Teledyne[J]. Proceedings of SPIE-The International Society for Optical Engineering, 7298(2009).

[5] Arias J M, Pasko J G, Zandian M et al. MBE HgCdTe heterostructure p-on-n planar infrared photodiodes[J]. Journal of Electronic Materials, 22, 1049-1053(1993).

[6] Mollard L, Destefanis G, Baier N et al. Planar p-on-n HgCdTe FPAs by Arsenic Ion Implantation[J]. Journal of Electronic Materials, 38, 1805-1813(2009).

[7] Baier N, Mollard L, Gravrand O et al. MCT planar p-on-n LW and VLW IRFPAs[J]. Proceedings of Spie the International Society for Optical Engineering, 8704(2013).

[8] Mollard L, Destefanis G, Rothman J et al. HgCdTe FPAs made by arsenic-ion implantation[J]. Proceedings of SPIE - The International Society for Optical Engineering(2008).

[9] Bensussan P, Tribolet P, Destéfanis G et al. Fifty years of successful MCT research and production in France[J]. Proc Spie, 7298, 72982N-72982N-31(2009).

[10] Fieque B, Chorier P, Lamoure A et al. Status of space activity and science detectors development at Sofradir[C](2019).

[11] Reibel Y, Rouvie A, Nedelcu A et al. Large format, small pixel pitch and hot detectors at SOFRADIR[C](2013).

[12] Baier N, Cervera C, Gravrand O et al. Latest Developments in Long-Wavelength and Very-Long-Wavelength Infrared Detection with p-on-n HgCdTe[J]. Journal of Elec Materi, 44, 1-7(2015).

[13] Tennant W E, Lee D, Zandian M et al. MBE HgCdTe Technology: A Very General Solution to IR Detection, Described by "Rule 07", a Very Convenient Heuristic[J]. Journal of Electronic Materials, 37, 1406-1410(2008).

[14] Dewames R, Maloney P, Billman C et al. Electro-optical characteristics of a MWIR and LWIR planar hetero-structure P+n HgCdTe photodiodes limited by intrinsic carrier recombination processes[J]. Proceedings of SPIE - The International Society for Optical Engineering, 8012, 546-550(2011).

[15] Simingalam S, Vanmil B L, Chen Y et al. Development and fabrication of extended short wavelength infrared HgCdTe sensors grown on CdTe/Si substrates by molecular beam epitaxy[J]. Solid State Electronics, 101, 90-94(2014).

[16] Wang C, Tobin S, Parodos T et al. Investigation of HgCdTe p-n device structures grown by liquid-phase epitaxy[J]. Journal of Electronic Materials, 35, 1192-1196(2006).

[17] Rutkowski J, Madejczyk P, Gawron W et al. Buried Long-Wavelength Infrared HgCdTe P-on-n Heterojunctions[C], 772, 1557(2005).

[18] Korotaev A G, Izhnin I I, Mynbaev K D et al. Hall-effect studies of modification of HgCdTe surface properties with ion implantation and thermal annealing[J]. Surface and Coatings Technology, 393, 125721(2020).

[19] Izhnin I I, Mynbaev K D, Swiatek Z et al. Direct comparison of the results of arsenic ion implantation in n–and p–type Hg0.8Cd0.2Te[J]. Infrared Physics & Technology, 109, 103388(2020).

[20] Chen Bo-liang, Li Xiang-yang[M]. Space infrared imaging detector, 12-63,(2016).