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Acta Optica Sinica, Volume. 45, Issue 16, 1612001(2025)

Optimized Characterization Model of Curvature Radius-Stress for Wafer Thin Films

Xiaodong Zhang, Zhiguo Han, Lin Zhao, Jiahuan Zhang, Xiaoqing Xu, Suoyin Li, and Aihua Wu*
Author Affiliations
  • The 13th Institute of CETC, Shijiazhuang 050051, Hebei , China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (12)
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    References (15)
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    Figures & Tables(12)
    Thermodynamic simulations of SiO2/Si assembly. (a) Stress distribution; (b) strain distribution; (c) static displacement

    Fig. 1. Thermodynamic simulations of SiO2/Si assembly. (a) Stress distribution; (b) strain distribution; (c) static displacement

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    Measuring principle of laser profilometer

    Fig. 2. Measuring principle of laser profilometer

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    Curvature radius-stress characterization model

    Fig. 3. Curvature radius-stress characterization model

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    Wafer thin-film stress measuring system

    Fig. 4. Wafer thin-film stress measuring system

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    Stress measuring software

    Fig. 5. Stress measuring software

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    40‒300 MPa stress calibrators

    Fig. 6. 40‒300 MPa stress calibrators

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    Comparison of stress measurement curves before and after film growth

    Fig. 7. Comparison of stress measurement curves before and after film growth

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    Stress measuring results of 40 MPa stress calibrator. (a) 0°; (b) 90°

    Fig. 8. Stress measuring results of 40 MPa stress calibrator. (a) 0°; (b) 90°

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    Stress measuring results of 150 MPa stress calibrator. (a) 0°; (b) 90°

    Fig. 9. Stress measuring results of 150 MPa stress calibrator. (a) 0°; (b) 90°

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    Stress measuring results of 300 MPa stress calibrator. (a) 0°; (b) 90°

    Fig. 10. Stress measuring results of 300 MPa stress calibrator. (a) 0°; (b) 90°

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    • Table 1. Model parameters

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      Table 1. Model parameters

      ParameterValue
      Si 100SiO₂
      Thermal expansion coefficient /（10-6 K-1）2.440.5
      Poisson’s ratio0.280.17
      Elastic modulus /GPa13079.1

    • Table 2. Repeatability of stress measuring results

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      Table 2. Repeatability of stress measuring results

      Nominal value /MPa

      method /MPa

      n-order polynomial

      method /MPa

      Least-squares

      0°90°0°90°
      400.420.180.400.19
      1500.140.170.120.03
      3000.630.300.220.16
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    Xiaodong Zhang, Zhiguo Han, Lin Zhao, Jiahuan Zhang, Xiaoqing Xu, Suoyin Li, Aihua Wu. Optimized Characterization Model of Curvature Radius-Stress for Wafer Thin Films[J]. Acta Optica Sinica, 2025, 45(16): 1612001

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    Paper Information

    Category: Instrumentation, Measurement and Metrology

    Received: Apr. 16, 2025

    Accepted: May. 21, 2025

    Published Online: Aug. 18, 2025

    The Author Email: Aihua Wu (wuaihua@cetc13.cn)

    DOI:10.3788/AOS250950

    CSTR:32393.14.AOS250950

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology