[1] [1] Haiyan Qin,Xuan Li,Su Shen. Novel optical lithography using silver superlens [J]. Chin. Opt. Lett.,2008,6(2):149-151

[2] [2] Zhou Yuan,Li Yanqiu. Optimization of double bottom antireflective coating for hyper numerical aperture lithography [J]. Acta Optica Sinica,2008,28(3):472-477

[3] [3] Zhou Yuan,Li Yanqiu. Bulk effects in hyper-numerical aperture optical lithography [J]. Acta Optica Sinica,2008,28(6):1091-1095

[4] [4] Sun Zhiyuan,Li Yanqiu. Spatial frequency analysis of resolution enhancement technology [J]. Acta Optica Sinica,2007,27(10):1758-1764

[5] [5] Guo Xiaowei,Du Jinglei,Liu Yongzhi. Improving the profiles of imaging patterns by optimizing mask in DMD-based maskless photolithography [J]. Acta Optica Sinica,2009,29(3):794-798

[6] [6] N. B. Cobb. Fast Optical and Process Proximity Correction Algorithms for Integrated Circuit Manufacturing [D]. CA:University of California Berkeley,1998

[7] [7] M. Bahnas,M. Al-Imam,T. Tawfik. Toward fast OPC convergence:advanced analysis for OPC Iterations and simulation environment [C]. SPIE,2008,7122:712248

[8] [8] Ye Chen,Kechih Wu,Zheng Shi et al.. A feasible model-based OPC algorithm using jacobian matrix of intensity distribution functions [C]. SPIE,2007,6520:65204C

[9] [9] N. B.Cobb,Y. Granik,model-based OPC using the MEEF matrix [C]. SPIE,2002;4889:1281-1292

[10] [10] N. Cobb,A. Zakhor. A mathematical and CAD framework for proximity correction [C]. SPIE,1996. 2726:208-222

[11] [11] W. C. Huang,C. H. Lin,C. C. Kuo et al.. Two threshold resist model for optical proximity correction [C]. SPIE,2004,5377:1536-1543

[12] [12] J. Randall,K. Ronse,T. Marschner et al.. Variable threshold resist models for lithography simulation [C]. SPIE,1999,3679:176-182