In this study, a three-dimensional model of an atomic layer deposition reaction chamber was established using SolidWorks software. The ANSYS Fluent fluid module was used to simulate and analyze the distribution of two precursors, Si₂H₆ and WF₆, in the reaction chamber. The simulation results indicate that the longer the pulse time, the lower is the chamber pressure, and the higher the chamber temperature, the easier it is for the precursor to achieve a uniform distribution. At a chamber temperature of 250 °C, a carrier gas flow rate of 20 sccm, chamber pressures of 20 Pa and 15 Pa for Si₂H₆ and WF₆, respectively, and pulse times of 30 ms and 35 ms, were achieved. The mass fraction of the precursor was found to be consistent across all regions of the chamber, achieving uniform distribution. Based on simulation data, a tungsten film was prepared on a glass substrate. Through characterization using atomic force microscopy and scanning electron microscopy, the film was found to have a low surface roughness and good thickness uniformity.