Electronics and Packaging, Volume. 25, Issue 7, 70104(2025)

Development of Integrated Passive Devices Based on Through Glass Via Interconnect Technology

LIU Xiaoxian, LIAO Lihang, and ZHU Zhangming*
Author Affiliations
  • Key Laboratory of Analog Integrated Circuits and Systems, Ministry of Education, School of Integrated Circuits, Xidian University, Xi'an 710071, China
  • show less
    References(29)

    [1] [1] SUKUMARAN V, KUMAR G, RAMACHANDRAN K, et al. Design, fabrication, and characterization of ultrathin 3-D glass interposers with through-package-vias at same pitch as TSVs in silicon[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2014, 4(5): 786-795.

    [2] [2] HSIEH M C, KANG K, CHOI H, et al. Thin profile flip chip package-on-package development[C]//2016 11th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), Taipei, China, 2016: 143-147.

    [3] [3] HSIEH M C, LIN S, HSU I, et al. Fine pitch high bandwidth flip chip package-on-package development[C]//2017 21st European Microelectronics and Packaging Conference (EMPC) & Exhibition, Warsaw, 2017: 1-5.

    [4] [4] WANG M J, HUNG C Y, KAO C L, et al. TSV technology for 2.5D IC solution[C]//2012 IEEE 62nd Electronic Components and Technology Conference, San Diego, CA, USA, 2012: 284-288.

    [5] [5] KNICKERBOCKER J U, ANDRY P S, BUCHWALTER L P, et al. Development of next-generation system-on-package (SOP) technology based on silicon carriers with fine-pitch chip interconnection[J]. IBM Journal of Research and Development, 2005, 49(4.5): 725-753.

    [6] [6] KHAN N, YOON S W, VISWANATH A G K, et al. Development of 3D stack package using silicon interposer for high power application[C]//56th Electronic Components and Technology Conference 2006, San Diego, CA, USA, 2006: 756-760.

    [7] [7] LAU J H. Reliability of RoHS-compliant 2D and 3D IC interconnects[M]. New York: McGraw-Hill Professional Publishing, 2011.

    [8] [8] TOPPER M, NDIP I, ERXLEBEN R, et al. 3-D thin film interposer based on TGV (through glass vias): an alternative to Si-interposer[C]//2010 Proceedings 60th Electronic Components and Technology Conference (ECTC), Las Vegas, NV, USA, 2010: 66-73.

    [9] [9] LUO B, MA M Y, ZHANG M A, et al. Composite glass-silicon substrates embedded with microcomponents for MEMS system integration[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2019, 9(2): 201-208.

    [10] [10] QIAN L B, XIA Y S, SHI G, et al. Electrical-thermal characterization of through packaging vias in glass interposer[J]. IEEE Transactions on Nanotechnology, 2017, 16(6): 901-908.

    [11] [11] QIAN L B, SANG J F, XIA Y S, et al. Investigating on through glass via based RF passives for 3-D integration[J]. IEEE Journal of the Electron Devices Society, 2018, 6: 755-759.

    [12] [12] LIU X X, ZHU Z M, LIU Y, et al. Wideband substrate integrated waveguide bandpass filter based on 3-D ICs[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2019, 9(4): 728-735.

    [13] [13] KUNG C Y, CHEN C H, LEE T C, et al. 3D-IPD with high aspect ratio Cu pillar inductor[C]//2018 IEEE 68th Electronic Components and Technology Conference (ECTC), San Diego, CA, USA, 2018: 1076-1081.

    [14] [14] HSIEH Y C, CHANG Y S, LEE T C, et al. Characterization of through glass via (TGV) RF inductors[C]//2016 11th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), Taipei, China, 2016: 87-90.

    [15] [15] CHEN L, YU T, REN X L, et al. Development of low cost through glass via (TGV) interposer with high-Qinductor and MIM capacitor[C]//2020 21st International Conference on Electronic Packaging Technology (ICEPT), Guangzhou, China, 2020: 1-4.

    [16] [16] HU Z H, ZHOU Q, MA H Z, et al. Development of low cost glass-based deep trench capacitor for 3D packaging[J]. IEEE Electron Device Letters, 2023, 44(9): 1535-1538.

    [17] [17] YU B, WANG Z G, WU P, et al. Wideband glass-based transitions from GCPW and SIW to RWG with high-efficiency mode excitation for W-band compact module integration[C]//2023 Asia-Pacific Microwave Conference (APMC), Taipei, China, 2023: 291-293.

    [18] [18] CHIU C L, CHEN T R, LEE C W, et al. The study of 60 GHz wideband conductor-backed coplanar waveguide on a TGV substrate[C]//2022 IEEE 11th Global Conference on Consumer Electronics (GCCE), Osaka, Japan, 2022: 816-817.

    [19] [19] WANG L Y, CHEN H W, LI W L, et al. Slow-wave substrate integrated waveguide with low loss and miniaturized dimensions using TGV technology[J]. IEEE Electron Device Letters, 2024, 45(4): 681-684.

    [20] [20] LIU X X, ZHU Z M, YANG Y T, et al. Balanced SIW BPF based on through-glass vias[C]//2020 International Conference on Microwave and Millimeter Wave Technology (ICMMT), Shanghai, China, 2020: 1-3.

    [21] [21] LI W L, WANG L Y, ZHANG J H, et al. SIW bandpass filter based on TGV technology for millimeter-wave wideband communications[C]//2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), Chengdu, China, 2023: 1-3.

    [22] [22] LI W L, ZHANG J H, GAO L B, et al. Compact TGV-based bandpass filters using integrated dual composite right/left-handed resonators[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2024, 71(4): 1939-1943.

    [23] [23] LIU X X, LIU Y, ZHANG T, et al. Substrate-integrated waveguide band-pass filter and diplexer with controllable transmission zeros and wide-stopband[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2023, 70(2): 526-530.

    [24] [24] FAN C H, LIU X X, LIU Y, et al. Wide-stopband substrate integrated waveguide filter power divider based on through glass quartz via (TQV) technology[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2022, 12(7): 1196-1203.

    [25] [25] LIU N, LIU X X, LIU Y, et al. Compact interdigital bandpass filter, diplexer, and triplexer based on through quartz vias (TQVs)[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2022, 12(6): 988-997.

    [26] [26] BERMOND C, CADIX L, FARCY A, et al. High frequency characterization and modeling of high density TSV in 3D integrated circuits[C]//2009 IEEE Workshop on Signal Propagation on Interconnects, Strasbourg, France, 2009: 1-4.

    [27] [27] LIU J X, ZHANG J H, FANG Z, et al. Parasitic RLGC properties of high-density through-glass via[C]//2024 25th International Conference on Electronic Packaging Technology (ICEPT), Tianjin, China, 2024: 1-6.

    [28] [28] FANG Z, ZHANG J H, LI S Q, et al. Modeling and analysis of parasitic parameters of through-glass vias with various tapers and sidewall roughness[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2024, 14(12): 2300-2308.

    [29] [29] ZHANG Z Y, DING Y T, CHEN Z M, et al. Design and evaluation of a novel and ultra-compact fully-TGV-based self-shielding bandpass filter for 5G applications[C]//2019 International 3D Systems Integration Conference (3DIC), Sendai, Japan, 2019: 1-4.

    Tools

    Get Citation

    Copy Citation Text

    LIU Xiaoxian, LIAO Lihang, ZHU Zhangming. Development of Integrated Passive Devices Based on Through Glass Via Interconnect Technology[J]. Electronics and Packaging, 2025, 25(7): 70104

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Mar. 25, 2025

    Accepted: Aug. 26, 2025

    Published Online: Aug. 26, 2025

    The Author Email: ZHU Zhangming (zmyh@263.net)

    DOI:10.16257/j.cnki.1681-1070.2025.0149

    Topics