Although the three-dimensional integration technology based on through silicon via can increase the data transmission bandwidth and integration degree, and has outstanding advantages in terms of size, compatibility and performance, it also faces major challenges such as large high-frequency loss and high process cost. Therefore, it is highly necessary to explore the millimeter-wave circuits and system integration technologies based on new substrate materials. Glass or quartz materials can overcome the defects such as high-frequency loss of silicon substrates and are currently relatively ideal substrate materials. Compared with silicon substrates, glass substrates, as low-dielectric insulators, can directly contact metal conductors without the need for an insulating isolation medium layer. Their process complexity and cost are significantly reduced. Their high-frequency electrical properties are more stable, and their coefficient of thermal expansion is similar to that of silicon substrates. When bonding with silicon-based integrated chips, the thermal stress generated is smaller, thereby reducing problems such as warpage and solder joint failure and improving the reliability of three-dimensional packaging. Therefore, the millimeter-wave integrated passive devices (IPDs) based on the glass interposers can achieve good electrical characteristics while maintaining low cost. The development of 3D IPD based on through glass via technology in China is introduced, as well as the influence of parasitic parameters on signal transmission with the development of through glass via technology and the reduction of aperture size.