Infrared and Laser Engineering, Volume. 50, Issue 6, 20200460(2021)

Research on testing of active and passive HgCdTe APD detector in linear mode

Qiwen Zhang1,2, Qinghua Liang1, Huijun Guo1, Honglei Chen1、*, and Ruijun Ding1、*
Author Affiliations
  • 1Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
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    Figures & Tables(19)
    (a) APD readout circuit Unit structure; (b) APD readout circuit working sequence
    System of circuit test
    Labview software design front panel and parameter setting
    Test method flow
    System noise test
    Ramp generator fixed time delay
    DetectorI/V test results
    Test results of HgCdTe APD intensity information
    (a) Circuit test sequence; (b) HgCdTe APD detector and circuit coupling test results
    Ramp slope
    V2d, V3d sampling results and TOF calculation results
    RMS results of TOF under multiple collections
    TOF test results under different ramp delays and slopes
    • Table 1. Geiger and linear mode APD performance comparsion

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      Table 1. Geiger and linear mode APD performance comparsion

      TypeGM-APDLM-APD
      Gain105-10610-103
      Dynamic rangeLowHigh
      Quenching circuitYesNo
      Intensity informationNoYes
      Continuous detection capabilityNoYes
    • Table 2. Readout circuit performance parameters

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      Table 2. Readout circuit performance parameters

      ParameterDescription
      TechnologyTSMC 0.18 μm 1P6M CMOS
      Temperature/K77
      Pixel/μm250×50
      Output swing/V1.5-4
      Power/mW17.5
    • Table 3. Instrument parameters

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      Table 3. Instrument parameters

      InstrumentResolutionHighest frequency
      512214 bits100 MHz
      81150A118.2 ps5 MHz
      Agilent N6700B<1 mV-
    • Table 4. Circuit test conditions

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      Table 4. Circuit test conditions

      ParameterValue
      Temperature/K77
      Preamp CTIA bias voltage/V1.5
      Comparator voltage/V3
      Ramp frequency/K200
      Ramp delay/μs1
      Laser pulse width/μs4.5
      APD reverse bias voltage/V2.5 (p=110 μW)
      Sampling frequency/MHz100
    • Table 5. Performance parameters that affect TOF resolution

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      Table 5. Performance parameters that affect TOF resolution

      TypeSub-typeResolution
      SystemSystem noise179 ps
      Ramp jitter118.20 ps
      Voltage source error135.36 ps@1 mV
      CircuitCapacitance deviation100 ps@0.222 fF
      Output jitter(V2d) 24.335 ps@1 mV
      Output jitter(V3d) 833 ps@1 mV
    • Table 6. Comparison of the proposed work with the Sofradir test platform and test results

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      Table 6. Comparison of the proposed work with the Sofradir test platform and test results

      Proposed workSofradir[14]
      Temperature/K7780
      Laser:min step/ns1012.5
      Ramp200 ns max; slope 15 mV/ns 200 ns; slope 10 mV/ns
      A/D14 bits; 2 V; 100 MHz14 bits; 4 V; 100 kHz
      Resolution/cm63.2160
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    Qiwen Zhang, Qinghua Liang, Huijun Guo, Honglei Chen, Ruijun Ding. Research on testing of active and passive HgCdTe APD detector in linear mode[J]. Infrared and Laser Engineering, 2021, 50(6): 20200460

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    Paper Information

    Category: Infrared technology and application

    Received: Jan. 3, 2021

    Accepted: --

    Published Online: Aug. 19, 2021

    The Author Email: Honglei Chen (chenhl@mail.sitp.ac.cn), Ruijun Ding (dingrj@mail.sitp.ac.cn)

    DOI:10.3788/IRLA20200460

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