[1] [1] M. Konuma. in: Film Deposition by Plasma Techniques, Berlin:Springer-Verlag, 1992. 166～168

[2] [2] C. Y. Chang, S. M. Sze (editors). ULSI Technology, Singapore, McGRAW-Hill, 1996. 168,251

[3] [3] J. L. Vossen, W. Kern. in: Thin Film Processes. New York: Academic Press, 1978. 342～348

[4] [4] S. S. Han, B. H. Jun, K. No et al.. Preparation of a-SiNx thin film with low hydrogen content by inductively coupled plasma enhanced chemical vapor deposition. J. Electrochem. Soc., 1998, 145(2):652～658

[5] [5] W. A. P. Classen. Ion bombardment-induced mechanical stress in plasma-enhanced deposited silicon nitride and silicon oxynitride films. Plasm. Chem. Plasm. Proc., 1987, 7(1):55～58

[6] [6] D. G. Park, M. Tao, D. Li et al.. Gate quality Si3N4 prepared by low temperature remote plasma enhanced chemical vapor deposition for Ⅲ-Ⅴ semiconductor-based metal-insulator-semiconductor devices. J. Vac. Sci. Technol., 1996, B14(4):2674～2683

[7] [7] Y. Manabe, T. Mitsuyu. Silicon nitride thin films prepared by the electron cyclotron resonance plasma chemical vapor deposition method. J. Appl. Phys., 1989, 66(6):2475～2480

[8] [8] S. Fujita, T. Ohishi, H. Toyoshima et al.. Electrical properties of silicon nitride films plasma-deposited from SiF4, N2 and H2 source gases. J. Appl. Phys., 1985, 57(2):426～431

[9] [9] H. O. Pierson. in: Handbook of Chemical Vapor Deposition. New Jersey, Noyes, 1992. 224

[10] [10] S. Fujita, H. Toyoshima, T. Ohishi et al.. Plasma-enhanced chemical vapor deposition of fluorinated silicon nitride. Jpn. J. Appl. Phys., 1984, 23(3):L144～L146

[11] [11] S. M. Sze. in: Semiconductor Devices—Physics and Technology. John Wiley & Sons, 1985. 356,372

[12] [12] H. O. Pierson. in: Handbook of Chemical Vapor Deposition. New Jersey, Noyes, 1992. 103～109

[13] [13] Jyoti Mazumder, Aravinda Kar. in: Theory and Application of Laser Chemical Vapor Deposition. New York, Plenum, 1995. 16

[14] [14] Dawei Gao, Katsuhiko Furukawa, Hiroshi Nakashima et al.. Room temperature deposition of silicon nitride films for passivation of organic electroluminescence device using a sputtering-type electron cyclotron resonance plasma. Jpn. J. Appl. Phys., 1999, 38(8, Pt.1):4868～4871

[15] [15] Joo Han Kim, Ki Woong Chung. Microstructure and properties of silicon nitride thin films deposited by reactive bias magnetron sputtering. J. Appl. Phys., 1998, 83(11):5831～5839

[16] [16] C. Y. Chang, S. M. Sze (editors). ULSI Technology, Singapore, McGRAW-Hill, 1996. 381～385

[17] [17] Brian Chapman, Stefano Mangano. in: Klaus K. Schuegraf (Editor). Handbook of Thin-film Deposition Processes and Techniques, New Jersey, Noyes, 1988. 315～316

[18] [18] P. A. Molian, A. Waschek. CO2 laser deposition of diamond thin films on electronic materials. J. Mater. Sci., 1993, 28(7):1733～1737

[19] [19] G. Viera, J. L. Andújar, S. N. Sharma et al.. Nanopowder of silicon nitride produced in radio frequency modulated glow discharges from SiH4 and NH3. Surf. Coat. Technol., 1998, 100-101:55

[20] [20] D. Metzger, K. Hesch, P. Hess. Process characterization and mechanism for laser-induced chemical vapor deposition of a-Si:H from SiH4. Appl. Phys. A, 1988, 45(4):345～353

[21] [21] J. Frster, Th. Hagen, M. Von Hoesslin et al.. Infrared absorption of silane, ammonia, acetylene and diborane in the range of the CO2 laser emission lines: measurements and modelling. Appl. Phys. B, 1996, 62(3):263～272