Fabrication of Large-Angle Dual-Band Detection Imaging Splitter

Xiuhua Fu; Ruiqi Liu; Zhongyao Zhu; Kexu Han; Ben Wang; Junqi Liu; Haicheng Liu

doi:10.3788/CJL221490

Chinese Journal of Lasers, Volume. 50, Issue 14, 1403101(2023)

Fabrication of Large-Angle Dual-Band Detection Imaging Splitter

Xiuhua Fu^1,2, Ruiqi Liu^1、*, Zhongyao Zhu³, Kexu Han¹, Ben Wang², Junqi Liu¹, and Haicheng Liu¹

Author Affiliations

¹School of Opto-Electronic Engineering, Changchun University of Science and Technology, Changchun 130022, Jilin, China

²Zhongshan Research Institute, Changchun University of Science and Technology, Zhongshan 528436, Guangdong, China

³Beijing Institute of Space Mechatronics, Beijing 100094, China

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Figures & Tables(14)

$Materials performances. (a) Transmittance curve of ZnS substrate; (b) refractive index of YbF3$

Fig. 1. Materials performances. (a) Transmittance curve of ZnS substrate; (b) refractive index of YbF₃

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$Refractive index of two films. (a) Ge; (b) ZnS$

Fig. 2. Refractive index of two films. (a) Ge; (b) ZnS

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$Equivalent refractive index E of symmetrical periodic film systems under vertical incidence[13]$

Fig. 3. Equivalent refractive index E of symmetrical periodic film systems under vertical incidence^[13]

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Fig. 4. Theoretical spectra of spectral surface and antireflection surface with 55° incidence. (a) Spectral surface; (b) antireflection surface

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Fig. 5. Theoretical spectrum with double-sided design

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Fig. 6. Surface shape of substrate, spectral surface and antireflection surface. (a) Substrate; (b) spectral surface; (c) antireflection surface

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Fig. 7. Comparison of theoretically designed spectrum and actual spectrum

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Fig. 8. Designed and actual spectra comparison for spectral surface. (a) Visible/near-infrared spectra; (b) mid-infrared spectra

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Fig. 9. Reflectivity and transmittance of double-sided film samples. (a) Reflectivity in band 0.6-0.9 μm; (b) transmittance in band 3.7-4.8 μm

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Fig. 10. Sample physical photos. (a) Spectral surface; (b) antireflection surface

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Table 1. Technical specifications of film

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Table 1. Technical specifications of film

Parameter	Indicator
Spectrum range /μm	0.6-0.9，3.7-4.8
Reflectivity R	>90%
Transmittance T	>90%
Incident angle /（°）	55±3
Peak-valley（PV）value of spectral surface /λ	≤0.2
PV value of antireflection surface /λ	≤0.4

Table 2. Deposition parameters of Ge, ZnS and YbF₃ films
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Table 2. Deposition parameters of Ge, ZnS and YbF₃ films
Film layer
Deposition rate/
（nm·s^-1）
Chamber
pressure/（10^-4 Pa）
Rotation rate/
（rad·min^-1）
Deposition temperature /℃
Ge 0.5 4 25 160
ZnS 2 4 25 160
YbF₃ 0.4 4 25 160

Table 3. Process parameters of ion source deposition
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Table 3. Process parameters of ion source deposition
Material Anodic voltage /V Ion beam current /mA Flow of argon gas /（mL·min^-1）
Cleaning 180 3 25
Ge 150 1 20
ZnS 150 1 20
YbF₃ 200 5 20

Table 4. Stress variation table of single-layer membrane
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Table 4. Stress variation table of single-layer membrane
Film layer Film thickness /nm Power /λ Stress /MPa
Before evaporation After evaporation Before process adjustment After process adjustment
ZnS 4261.6 0.138 -1.24 180 208
YbF₃ 6127.4 0.172 1.47 276 222

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Xiuhua Fu, Ruiqi Liu, Zhongyao Zhu, Kexu Han, Ben Wang, Junqi Liu, Haicheng Liu. Fabrication of Large-Angle Dual-Band Detection Imaging Splitter[J]. Chinese Journal of Lasers, 2023, 50(14): 1403101

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