Temperature Characteristics of 780 nm Broad‑Area High‑Efficiency Semiconductor Laser

Xianda Zheng; Yanan Liu; Cunzhu Tong; Lijie Wang; Yingjun Guo

doi:10.3788/CJL240810

Chinese Journal of Lasers, Volume. 52, Issue 3, 0301004(2025)

Temperature Characteristics of 780 nm Broad‑Area High‑Efficiency Semiconductor Laser

Xianda Zheng^1,2, Yanan Liu³, Cunzhu Tong^1,3, Lijie Wang^1,3、*, and Yingjun Guo³

¹Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, Jilin , China

²University of Chinese Academy of Sciences, Beijing 100049, China

³Jlight Semiconductor Technology Co., Ltd., Changchun 130031, Jilin , China

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References(23)

[1] Pitz G A, Anderson M D. Recent advances in optically pumped alkali lasers[J]. Applied Physics Reviews, 4, 041101(2017).

[2] Keaveney J, Hamlyn W J, Adams C S et al. A single-mode external cavity diode laser using an intra-cavity atomic Faraday filter with short-term linewidth <400 kHz and long-term stability of <1 MHz[J]. The Review of Scientific Instruments, 87, 095111(2016).

[3] Li Y, Wang H M, Zhang L et al. High power semiconductor lasers with output power over 16 W for single emitter and 180 W for bar operation at 780 nm under CW operation[J]. High Power Laser and Particle Beams, 35, 111002(2023).

[4] Bao L, Wang J, Devito M et al. Performance and reliability of high power 7xx nm laser diodes[J]. Proceedings of SPIE, 7953, 79531B(2011).

[5] Crump P A, Wilkens M, Hübner M et al. Efficient, high power 780 nm pumps for high energy class mid-infrared solid state lasers[J]. Proceedings of SPIE, 11262, 1126204(2020).

[6] Liu G L, Lehkonen S, Li J W et al. High power and reliable 793 nm T-bar and single emitter for thulium-doped fiber laser pumping[J]. Proceedings of SPIE, 11262, 1126208(2020).

[7] Hu H M, Zhao J Y, Wang W M et al. 12 W high power InGaAsP/AlGaInP 755 nm quantum well laser[J]. Chinese Optics Letters, 17, 061403(2019).

[8] He L A, Zhou K, Zhang L et al. Fabrication of high-power semiconductor laser with wavelength-locked at 780 nm[J]. High Power Laser and Particle Beams, 33, 091001(2021).

[9] Li Y, Wang H M, Du W C et al. High power 780 nm single emitter with 16 W and bar with 180W of continuous-wave output laser diodes[J]. Proceedings of SPIE, 12959, 129591C(2023).

[10] Wang B G, Zhou L, Tan S Y et al. 71% wall-plug efficiency from 780 nm-emitting laser diode with GaAsP quantum well[J]. Optics & Laser Technology, 168, 109867(2024).

[11] Chen F, Cui B F, Feng J Y et al. Research and progress of high-power semiconductor lasers with high beam quality[J]. Laser & Optoelectronics Progress, 60, 2100002(2023).

[12] Wang J, Smith B, Xie X M et al. High-efficiency diode lasers at high output power[J]. Applied Physics Letters, 74, 1525-1527(1999).

[13] Levy M, Berk Y, Karni Y. Effect of compressive and tensile strain on the performance of 808-nm QW high power laser diodes[J]. Proceedings of SPIE, 6104, 61040B(2006).

[14] Li L, Liu G J, Li Z G et al. High-efficiency 808-nm InGaAlAs‒AlGaAs double-quantum-well semiconductor lasers with asymmetric waveguide structures[J]. IEEE Photonics Technology Letters, 20, 566-568(2008).

[15] Crump P, Wenzel H, Erbert G et al. Passively cooled TM polarized 808-nm laser bars with 70% power conversion at 80-W and 55-W peak power per 100- μm stripe width[J]. IEEE Photonics Technology Letters, 20, 1378-1380(2008).

[16] Wang Z F, Li T, Yang G W et al. High power, high efficiency continuous-wave 808 nm laser diode arrays[J]. Optics & Laser Technology, 97, 297-301(2017).

[17] Liu Y X, Yang G W, Zhao Y M et al. 48 W continuous-wave output from a high- efficiency single emitter laser diode at 915 nm[J]. IEEE Photonics Technology Letters, 34, 1218-1221(2022).

[18] Al-Muhanna A, Wade J K, Mawst L J et al. 730-nm emitting Al-free active region diode lasers with compressively-strained InGaAsP quantum wells[J]. Applied Physics Letters, 72, 641-643(1998).

[19] Hu H P, Tang B, Wan H et al. Boosted ultraviolet electroluminescence of InGaN/AlGaN quantum structures grown on high-index contrast patterned sapphire with silica array[J]. Nano Energy, 69, 104427(2020).

[20] Wang Z N, Zhong L, Zhang D S et al. 976 nm fundamental transverse mode ridge diode laser with narrow far-field divergence angle[J]. Acta Optica Sinica, 44, 0814002(2024).

[21] Chang J Y, Xiong C, Qi Q et al. 1550 nm high-power fundamental transverse mode semiconductor laser and its temperature characteristics[J]. Acta Optica Sinica, 43, 0714003(2023).

[22] Crump P, Blume G, Paschke K et al. 20 W continuous wave reliable operation of 980 nm broad-area single emitter diode lasers with an aperture of 96μm[J]. Proceedings of SPIE, 7198, 719814(2009).

[23] Zhang Y, Ning Y Q, Zhang L S et al. Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs[J]. Optics Express, 19, 12569-12581(2011).

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Xianda Zheng, Yanan Liu, Cunzhu Tong, Lijie Wang, Yingjun Guo. Temperature Characteristics of 780 nm Broad‑Area High‑Efficiency Semiconductor Laser[J]. Chinese Journal of Lasers, 2025, 52(3): 0301004

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Paper Information

Category: laser devices and laser physics

Received: Apr. 24, 2024

Accepted: May. 22, 2024

Published Online: Jan. 20, 2025

The Author Email: Wang Lijie (wanglijie@ciomp.ac.cn)

DOI:10.3788/CJL240810

CSTR:32183.14.CJL240810

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology