Chinese Journal of Lasers, Volume. 52, Issue 3, 0301004(2025)

Temperature Characteristics of 780 nm Broad‑Area High‑Efficiency Semiconductor Laser

Xianda Zheng1,2, Yanan Liu3, Cunzhu Tong1,3, Lijie Wang1,3、*, and Yingjun Guo3
Author Affiliations
  • 1Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, Jilin , China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Jlight Semiconductor Technology Co., Ltd., Changchun 130031, Jilin , China
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    Figures & Tables(11)
    Refractive index and near-field mode distributions of laser epitaxial structure
    Optical power, voltage, and conversion efficiency versus operation current at room temperature under continuous operation condition
    Laser results measured under 10 A continuous current. (a) Far-field distribution; (b) excitation spectrum
    Optical power, voltage, and conversion efficiency versus operation current at room temperature under quasi-continuous operation condition
    Laser performance versus operation temperature under 5 A continuous current. (a) Lateral far-field distributions; (b) B
    Laser performance under different continuous currents. (a) Lateral far-field distributions; (b) B
    ln Ith and ln S versus operation temperature (dots are measurement data and lines are fitting curves)
    Measured excitation spectra under different operation currents at room temperature
    Relationship between device wavelength and dissipated power at 25 ℃ heatsink temperature
    Laser lifetime test results at 25 ℃ heatsink temperature
    • Table 1. Performance comparison of 7xx nm semiconductor laser single emitter

      View table

      Table 1. Performance comparison of 7xx nm semiconductor laser single emitter

      Diode laser single emitterWavelength /nmEmitter width /μmCavity length /mmOutput power /WConversion efficiency
      nLight478620031064%@10 W
      Coherent679310035.660.3%@5.6 W
      Raybow77553502.512.754.4%@12 W
      CAEP9780150416.3

      62%@11.4 W

      58%@16.3 W

      Everbright Photonics10780150216.3

      71%@7 W

      60%@16.3 W

      This work7802004

      13 (CW)

      16.3 (QCW)

      66%@13 W (CW)

      69%@16.3 W (QCW)

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    Xianda Zheng, Yanan Liu, Cunzhu Tong, Lijie Wang, Yingjun Guo. Temperature Characteristics of 780 nm Broad‑Area High‑Efficiency Semiconductor Laser[J]. Chinese Journal of Lasers, 2025, 52(3): 0301004

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    Paper Information

    Category: laser devices and laser physics

    Received: Apr. 24, 2024

    Accepted: May. 22, 2024

    Published Online: Jan. 20, 2025

    The Author Email: Wang Lijie (wanglijie@ciomp.ac.cn)

    DOI:10.3788/CJL240810

    CSTR:32183.14.CJL240810

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