Chinese Journal of Lasers, Volume. 52, Issue 3, 0301004(2025)
Temperature Characteristics of 780 nm Broad‑Area High‑Efficiency Semiconductor Laser
Fig. 1. Refractive index and near-field mode distributions of laser epitaxial structure
Fig. 2. Optical power, voltage, and conversion efficiency versus operation current at room temperature under continuous operation condition
Fig. 3. Laser results measured under 10 A continuous current. (a) Far-field distribution; (b) excitation spectrum
Fig. 4. Optical power, voltage, and conversion efficiency versus operation current at room temperature under quasi-continuous operation condition
Fig. 5. Laser performance versus operation temperature under 5 A continuous current. (a) Lateral far-field distributions; (b) B
Fig. 6. Laser performance under different continuous currents. (a) Lateral far-field distributions; (b) B
Fig. 7. ln
Fig. 8. Measured excitation spectra under different operation currents at room temperature
Fig. 9. Relationship between device wavelength and dissipated power at 25 ℃ heatsink temperature
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Xianda Zheng, Yanan Liu, Cunzhu Tong, Lijie Wang, Yingjun Guo. Temperature Characteristics of 780 nm Broad‑Area High‑Efficiency Semiconductor Laser[J]. Chinese Journal of Lasers, 2025, 52(3): 0301004
Category: laser devices and laser physics
Received: Apr. 24, 2024
Accepted: May. 22, 2024
Published Online: Jan. 20, 2025
The Author Email: Wang Lijie (wanglijie@ciomp.ac.cn)
CSTR:32183.14.CJL240810