Polariton lasing in InGaN quantum wells at room temperature

Jinzhao Wu; Hao Long; Xiaoling Shi; Song Luo; Zhanghai Chen; Zhechuan Feng; Leiying Ying; Zhiwei Zheng; Baoping Zhang

doi:10.29026/oea.2019.190014

Opto-Electronic Advances, Volume. 2, Issue 12, 190014-1(2019)

Polariton lasing in InGaN quantum wells at room temperature

Jinzhao Wu¹, Hao Long^1、*, Xiaoling Shi¹, Song Luo², Zhanghai Chen², Zhechuan Feng³, Leiying Ying¹, Zhiwei Zheng¹, and Baoping Zhang¹

Author Affiliations

¹Department of Electronic Engineering, School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China

²Surface Physics Laboratory, Department of Physics, Fudan University, Shanghai 200433, China

³School of Physical Science and Technology, Guangxi University, Nanning 530004, China

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References(30)

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Jinzhao Wu, Hao Long, Xiaoling Shi, Song Luo, Zhanghai Chen, Zhechuan Feng, Leiying Ying, Zhiwei Zheng, Baoping Zhang. Polariton lasing in InGaN quantum wells at room temperature[J]. Opto-Electronic Advances, 2019, 2(12): 190014-1

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Paper Information

Category: Original Article

Received: Apr. 23, 2019

Accepted: May. 22, 2019

Published Online: Jan. 8, 2020

The Author Email: Hao Long (bzhang@xmu.edu.cn)

DOI:10.29026/oea.2019.190014

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology