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Opto-Electronic Advances, Volume. 2, Issue 12, 190014-1(2019)

Polariton lasing in InGaN quantum wells at room temperature

Jinzhao Wu1, Hao Long1、*, Xiaoling Shi1, Song Luo2, Zhanghai Chen2, Zhechuan Feng3, Leiying Ying1, Zhiwei Zheng1, and Baoping Zhang1
Author Affiliations
  • 1Department of Electronic Engineering, School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China
  • 2Surface Physics Laboratory, Department of Physics, Fudan University, Shanghai 200433, China
  • 3School of Physical Science and Technology, Guangxi University, Nanning 530004, China
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    (a) Sample structure of InGaN/GaN MQWs microcavity for strong coupling. (b) The optical field in the microcavity with MQWs placed on the antinode. (c) and (d) Photoluminescence spectrums of bare wafer at 15 K and 300 K.

    Fig. 1. (a) Sample structure of InGaN/GaN MQWs microcavity for strong coupling. (b) The optical field in the microcavity with MQWs placed on the antinode. (c) and (d) Photoluminescence spectrums of bare wafer at 15 K and 300 K.

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    (a) Schematic of angle-resolved micro-PL setup. (b) Schematic of angle-resolved PL Fourier image setup. (c) The angle resolved micro-PL of positive detuning sample. (d) LPB and UPB dispersion curves fitted by coupled oscillator model. (e) The angle resolved micro-PL Fourier image of negative detuning sample.

    Fig. 2. (a) Schematic of angle-resolved micro-PL setup. (b) Schematic of angle-resolved PL Fourier image setup. (c) The angle resolved micro-PL of positive detuning sample. (d) LPB and UPB dispersion curves fitted by coupled oscillator model. (e) The angle resolved micro-PL Fourier image of negative detuning sample.

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    (a) The dependence of luminous intensity, peak position and half-width of LPB on the excitation power with double nonlinear regimes. (b) Enlarged polariton lasing region with linear coordinates. (T1 and T2 denote the polariton lasing threshold and photonic lasing threshold)

    Fig. 3. (a) The dependence of luminous intensity, peak position and half-width of LPB on the excitation power with double nonlinear regimes. (b) Enlarged polariton lasing region with linear coordinates. (T1 and T2 denote the polariton lasing threshold and photonic lasing threshold)

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    The k-space mapping of exciton polaritons under different excitation power.(a) and (b) polariton (T1) and photonic (T2) lasing thresholds respectively.

    Fig. 4. The k-space mapping of exciton polaritons under different excitation power. (a) and (b) polariton (T1) and photonic (T2) lasing thresholds respectively.

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    Jinzhao Wu, Hao Long, Xiaoling Shi, Song Luo, Zhanghai Chen, Zhechuan Feng, Leiying Ying, Zhiwei Zheng, Baoping Zhang. Polariton lasing in InGaN quantum wells at room temperature[J]. Opto-Electronic Advances, 2019, 2(12): 190014-1

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    Paper Information

    Category: Original Article

    Received: Apr. 23, 2019

    Accepted: May. 22, 2019

    Published Online: Jan. 8, 2020

    The Author Email: Hao Long (bzhang@xmu.edu.cn)

    DOI:10.29026/oea.2019.190014

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology