All-inorganic halide perovskites， as semiconductor materials with tunable bandgaps， exhibit superior thermal and photostability compared to organic-inorganic hybrid perovskites， and have recently garnered significant attention in solar cells， UV-Vis photodetectors， and light-emitting diodes， demonstrating potential as pivotal materials for advancing high-performance optoelectronic devices. Epitaxial growth technology， through the construction of lattice-matched heterointerfaces for high-quality crystalline film deposition， combined with strain engineering for photoelectronic property modulation， has emerged as a cornerstone strategy in semiconductor manufacturing. As all-inorganic halide perovskites progress toward commercial optoelectronic applications， critical challenges emerge in precisely controlling film crystallinity， reducing defect-state densities， and optimizing interface characteristics. This review comprehensively examines the material structures of halide perovskites and fundamental principles of epitaxial growth， discusses recent advances in epitaxial growth of all-inorganic halide perovskite films based on fabrication methodologies and substrate lattice-matching criteria in classification. Finally， this review outlines future research directions， proposing that in situ growth monitoring， atomic-scale interface characterization， and scalable manufacturing processes will further enhance device performance and application breadth of all-inorganic halide perovskites.