Journal of Synthetic Crystals, Volume. 54, Issue 7, 1208(2025)
Research Progress on Epitaxial Growth of All-Inorganic Halide Perovskite Thin Films
All-inorganic halide perovskites, as semiconductor materials with tunable bandgaps, exhibit superior thermal and photostability compared to organic-inorganic hybrid perovskites, and have recently garnered significant attention in solar cells, UV-Vis photodetectors, and light-emitting diodes, demonstrating potential as pivotal materials for advancing high-performance optoelectronic devices. Epitaxial growth technology, through the construction of lattice-matched heterointerfaces for high-quality crystalline film deposition, combined with strain engineering for photoelectronic property modulation, has emerged as a cornerstone strategy in semiconductor manufacturing. As all-inorganic halide perovskites progress toward commercial optoelectronic applications, critical challenges emerge in precisely controlling film crystallinity, reducing defect-state densities, and optimizing interface characteristics. This review comprehensively examines the material structures of halide perovskites and fundamental principles of epitaxial growth, discusses recent advances in epitaxial growth of all-inorganic halide perovskite films based on fabrication methodologies and substrate lattice-matching criteria in classification. Finally, this review outlines future research directions, proposing that in situ growth monitoring, atomic-scale interface characterization, and scalable manufacturing processes will further enhance device performance and application breadth of all-inorganic halide perovskites.
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Yansu SHAN, Xingmu LI, Xia WANG, Dehua WU, Bingqiang CAO. Research Progress on Epitaxial Growth of All-Inorganic Halide Perovskite Thin Films[J]. Journal of Synthetic Crystals, 2025, 54(7): 1208
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Received: Apr. 26, 2025
Accepted: --
Published Online: Aug. 28, 2025
The Author Email: Bingqiang CAO (mse_caobq@ujn.edu.cn)