Researching | Effect of pulse on performance of InGaZnO thin film transistor

Chinese Journal of Liquid Crystals and Displays, Volume. 39, Issue 4, 466(2024)

Effect of pulse on performance of InGaZnO thin film transistor

Heyuan QIU, Xin XIE^*, Zongxiang LI, Zhouyu CHEN, Baoqiang WANG, Wenchao WANG, Zheng LIU, Yao LIU, Nani LIU, and Yang WANG

Author Affiliations

Fuzhou BOE Optoelectronics Technology Co. Ltd.，Fuzhou 350300，China

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References(15)

[1] STREET R A[M]. Technology and Applications of Amorphous Silicon(2010).

[2] LIAO Y P, SONG Y Z, SHAO X B et al[M]. Thin Film Transistor Liquid Crystal Display(2016).

[3] LIN H T, CHEN X, ZHUANG Z H et al. Influencing factors of TFT-LCD common voltage on the coupling of signal voltage and the relationship with line image sticking[J]. Chinese Journal of Liquid Crystals and Displays, 33, 277-284(2018).

[4] NOMURA K, OHTA H, TAKAGI A et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors[J]. Nature, 432, 488-492(2004).

[5] WU H C, CHIEN C H. High performance InGaZnO thin film transistor with InGaZnO source and drain electrodes[J]. Applied Physics Letters, 102, 062103(2013).

[6] KIM J I, CHO I T, JEONG C Y et al. Local-degradation-induced threshold voltage shift in turned-OFF amorphous InGaZnO thin film transistors under AC drain bias stress[J]. IEEE Electron Device Letters, 36, 579-581(2015).

[7] JEONG C Y, LEE D, SONG S H et al. A study on the degradation mechanism of InGaZnO thin-film transistors under simultaneous gate and drain bias stresses based on the electronic trap characterization[J]. Semiconductor Science and Technology, 29, 045023(2014).

[8] WAGER J F. Transparent electronics[J]. Science, 300, 1245-1246(2003).

[9] CHEN T C, CHANG T C, TSAI C T et al. Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress[J]. Applied Physics Letters, 97, 112104(2010).

[10] CHEN T C, CHANG T C, HSIEH T Y et al. Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor[J]. Applied Physics Letters, 99, 022104(2011).

[11] HSIEH T Y, CHANG T C, CHEN T C et al. Self-heating-effect-induced degradation behaviors in a-InGaZnO thin-film transistors[J]. IEEE Electron Device Letters, 34, 63-65(2013).

[12] LEE J M, CHO I T, LEE J H et al. Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors[J]. Applied Physics Letters, 93, 093504(2008).

[13] HSIEH T Y, CHANG T C, CHEN Y T et al. Hot-carrier effect on amorphous In-Ga-Zn-O thin-film transistors with a via-contact structure[J]. IEEE Electron Device Letters, 34, 638-640(2013).

[14] LEE S M, YU C G, CHO W J et al. Hot carrier degradation of InGaZnO thin film transistors under light illumination at the elevated temperature[J]. Solid-State Electron, 72, 88-92(2012).

[15] CONLEY J F. Instabilities in amorphous oxide semiconductor thin-film transistors[J]. IEEE Transactions on Device and Materials Reliability, 10, 460-475(2010).

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Heyuan QIU, Xin XIE, Zongxiang LI, Zhouyu CHEN, Baoqiang WANG, Wenchao WANG, Zheng LIU, Yao LIU, Nani LIU, Yang WANG. Effect of pulse on performance of InGaZnO thin film transistor[J]. Chinese Journal of Liquid Crystals and Displays, 2024, 39(4): 466

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Paper Information

Category: Research Articles

Received: Jan. 31, 2024

Accepted: --

Published Online: May. 28, 2024

The Author Email: Xin XIE (xiexinfz@boe.com.cn)

DOI:10.37188/CJLCD.2024-0042

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