Chinese Journal of Liquid Crystals and Displays, Volume. 39, Issue 4, 466(2024)
Effect of pulse on performance of InGaZnO thin film transistor
Fig. 3. Equivalent circuit diagram of pulse simulation test and sequence diagram of each test signal
Fig. 5. M2 transfer characteristic curves at different pulse time when VGH=34 V(inset:Vth variation with time)
Fig. 6. M2 transfer characteristic curve under Pulse at different VGH for 10 min(inset:Vth variation with VGH)
Fig. 7. PU waveform of different pulse experiments at different VGH
Fig. 9. M2 transfer characteristic curves after heating at 230 ℃ for 20 min
Fig. 10. M2 transfer characteristic curves after 17 h pulse at VGH=30 V and LVGL=-10 V
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Heyuan QIU, Xin XIE, Zongxiang LI, Zhouyu CHEN, Baoqiang WANG, Wenchao WANG, Zheng LIU, Yao LIU, Nani LIU, Yang WANG. Effect of pulse on performance of InGaZnO thin film transistor[J]. Chinese Journal of Liquid Crystals and Displays, 2024, 39(4): 466
Category: Research Articles
Received: Jan. 31, 2024
Accepted: --
Published Online: May. 28, 2024
The Author Email: Xin XIE (xiexinfz@boe.com.cn)