Chinese Journal of Liquid Crystals and Displays, Volume. 39, Issue 4, 466(2024)

Effect of pulse on performance of InGaZnO thin film transistor

Heyuan QIU, Xin XIE*, Zongxiang LI, Zhouyu CHEN, Baoqiang WANG, Wenchao WANG, Zheng LIU, Yao LIU, Nani LIU, and Yang WANG
Author Affiliations
  • Fuzhou BOE Optoelectronics Technology Co. Ltd.,Fuzhou 350300,China
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    Figures & Tables(10)
    Equivalent circuit diagram of GOA critical TFT device
    M2 transfer characteristic curves
    Equivalent circuit diagram of pulse simulation test and sequence diagram of each test signal
    PU waveform of pulse simulation when VGH=34 V
    M2 transfer characteristic curves at different pulse time when VGH=34 V(inset:Vth variation with time)
    M2 transfer characteristic curve under Pulse at different VGH for 10 min(inset:Vth variation with VGH)
    PU waveform of different pulse experiments at different VGHand M2 transfer characteristic curves after 10 min pulse.(a)PU waveform at different Inputvoltage(b)M2 transfer characteristic curve at different Input voltage pulse;(c)PU waveform at different CLK voltages;(d)M2 transfer characteristic curve under different CLK voltage pulses.
    Cross-section diagram of IGZO-TFT
    M2 transfer characteristic curves after heating at 230 ℃ for 20 min
    M2 transfer characteristic curves after 17 h pulse at VGH=30 V and LVGL=-10 V
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    Heyuan QIU, Xin XIE, Zongxiang LI, Zhouyu CHEN, Baoqiang WANG, Wenchao WANG, Zheng LIU, Yao LIU, Nani LIU, Yang WANG. Effect of pulse on performance of InGaZnO thin film transistor[J]. Chinese Journal of Liquid Crystals and Displays, 2024, 39(4): 466

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    Paper Information

    Category: Research Articles

    Received: Jan. 31, 2024

    Accepted: --

    Published Online: May. 28, 2024

    The Author Email: Xin XIE (xiexinfz@boe.com.cn)

    DOI:10.37188/CJLCD.2024-0042

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