Fig. 1. Material characterization. (a) TEM image of HgTe CQDs before and after mixed-phase ligand exchange; (b) absorption spectra of SWIR and MWIR; (c) schematic of FET measurement of HgTe CQDs film; (d) FET transfer curves of N type, intrinsic type, and P type MWIR HgTe CQDs at 300 K, respectively

Fig. 2. Device structure design. (a) Structure schematic and cross-sectional SEM image of high mobility CQDs P-I heterojunction; (b) energy structure of CQDs P-I heterojunction

Fig. 3. Performance of the high carrier mobility photodetectors. (a) SWIR I-V curves at 300 K; (b) MWIR I-V curves at 80 K; (c) specific detectivity (D^*) as a function of the temperature of high mobility on SWIR and MWIR devices; (d) spectral response of SWIR device at 80 K and 300 K; (e) spectral response of MWIR device at 80 K and 300 K; (f) responsivity (ℜ) as a function of the temperature of high mobility on SWIR and MWIR device

Fig. 4. Device application. (a) Experimental setup for absorption spectroscopy measurements with high-carrier mobility detectors; (b) (c) detector spectral responses with and without samples at SWIR and MWIR mode, respectively; (d) imaging result of SWIR and MWIR devices; (e) light transmittance of TCE, BA, DDT, and CBZ in SWIR mode, illustrations are the visible light images of four samples; (f) light transmittance of PVC and PP in MWIR mode, illustrations are the visible light images of two samples