Researching | Gate voltage control of helicity-dependent photocurrent and polarization detection in (Bi1−xSbx)2Te3 topological insulator thin films

Photonics Research, Volume. 11, Issue 11, 1902(2023)

Gate voltage control of helicity-dependent photocurrent and polarization detection in (Bi_1−xSb_x)₂Te₃ topological insulator thin films

Shenzhong Chen¹, Jinling Yu^1,5、*, Xiyu Hong², Kejing Zhu², Yonghai Chen^3,4, Shuying Cheng¹, Yunfeng Lai¹, Ke He^2,6、*, and Qikun Xue²

Author Affiliations

¹Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China

²State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China

³Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

⁴College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

⁵e-mail: jlyu@semi.ac.cn

⁶e-mail: kehe@mail.tsinghua.edu.cn

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Shenzhong Chen, Jinling Yu, Xiyu Hong, Kejing Zhu, Yonghai Chen, Shuying Cheng, Yunfeng Lai, Ke He, Qikun Xue, "Gate voltage control of helicity-dependent photocurrent and polarization detection in (Bi_1−xSb_x)₂Te₃ topological insulator thin films," Photonics Res. 11, 1902 (2023)

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Paper Information

Category: Optical and Photonic Materials

Received: May. 11, 2023

Accepted: Sep. 14, 2023

Published Online: Oct. 25, 2023

The Author Email: Jinling Yu (jlyu@semi.ac.cn), Ke He (kehe@mail.tsinghua.edu.cn)

DOI:10.1364/PRJ.494932

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology