Photonics Research, Volume. 11, Issue 11, 1902(2023)

Gate voltage control of helicity-dependent photocurrent and polarization detection in (Bi1−xSbx)2Te3 topological insulator thin films

Shenzhong Chen1, Jinling Yu1,5、*, Xiyu Hong2, Kejing Zhu2, Yonghai Chen3,4, Shuying Cheng1, Yunfeng Lai1, Ke He2,6、*, and Qikun Xue2
Author Affiliations
  • 1Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
  • 2State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
  • 3Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 4College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  • 5e-mail: jlyu@semi.ac.cn
  • 6e-mail: kehe@mail.tsinghua.edu.cn
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    Shenzhong Chen, Jinling Yu, Xiyu Hong, Kejing Zhu, Yonghai Chen, Shuying Cheng, Yunfeng Lai, Ke He, Qikun Xue, "Gate voltage control of helicity-dependent photocurrent and polarization detection in (Bi1−xSbx)2Te3 topological insulator thin films," Photonics Res. 11, 1902 (2023)

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    Paper Information

    Category: Optical and Photonic Materials

    Received: May. 11, 2023

    Accepted: Sep. 14, 2023

    Published Online: Oct. 25, 2023

    The Author Email: Jinling Yu (jlyu@semi.ac.cn), Ke He (kehe@mail.tsinghua.edu.cn)

    DOI:10.1364/PRJ.494932

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