Fig. 1. （a）Mid-infrared semimetal polarization detector with configurable polarity transition^［23］： （i）Schematic of the detector structure and electrical connections； （ii）Polarization-dependent optical response under different gate voltages. When V_g = -23 V， the photoresponse induced by 135° polarized light equals 0； （iii）and （iv）Nonlocal vector photocurrent induced by nanoantennas under 0° and 90° polarized light. （b）Te nanoribbon infrared photodetector integrated with a perfect plasmonic absorber on one electrode^［25］： （i）Schematic of the device structure； （ii）Polarization-dependent optical absorption characteristics of the perfect plasmonic absorber； （iii）Heating one end of Te using the perfect plasmonic absorber； （iv）Polarization-dependent photoresponse characteristics under different power. （c）Configurable integrated linear polarization detector with a set of orthogonal gratings^［32］： （i）Schematic of the device structure； （ii）Modulation of polarization-sensitive characteristics of the detector by adjusting the gate voltage； （iii）Single-pixel imaging. （d）Configurable integrated circular polarization detector based on the optoelectronic silent state^［16］： （i）Schematic of the device structure； （ii）Adjustment of the photoresponse of the detector by changing the light spot position， where the photocurrent generated by right-handed circular polarized light can be reduced to 0； （iii）Noise of the device under different polarization angles； （iv）Contour of CPER （wavelength λ， frequency f）of the detector dimer in the LCP-responsive ultrahigh-CPER mode based on experimental data

Fig. 2. （a）The polarization photodetector based on CdSb₂Se₃Br₂/WSe₂ heterojunction^［37］： （i）schematic of the detector structure； （ii）achieving an infinite PER near gate voltages of -20 V and -6 V. （b）photovoltaic heterostructure based on 1T’-MoTe₂ and WSe₂^［38］： （i）schematic of the detector materials； （ii）Polarization-dependent photocurrent under different gate voltages. （c）black phosphorus photodetector with BPVE defined by ferroelectric domains^［39］： （i）schematic of the detector structure and polarization pattern of the ferroelectric domains； （ii）dependence of the photocurrent on bias voltage under different polarization angles

Fig. 3. （a）Zero-bias mid-infrared graphene photodetector with bulk photoresponse and calibration-free polarization detection^［35］： （i）schematic diagram of the device structure and electrical connections； （ii）polarization-dependent photocurrent measured at the three ports of the device， all showing a polarization extinction ratio of -1. （b）geometric filterless photodetector^［24］： （i）illustration of the T-antenna integrated on graphene； （ii）photocurrent response of the device to different Stokes parameters. （c）zero-bias long-wave infrared nanoantenna-mediated graphene photodetector^［47］： （i）schematic representation of the device structure； （ii）bipolar photocurrent response dependent on polarization. （d）circularly polarized light photodetector using dielectric achiral nanostructures^［36］： （i）schematic diagram of the device structure； （ii）coupling differences of dielectric achiral nanostructures on left- and right-handed circularly polarized light

Fig. 4. （a）Thermopile detector capable of measuring optical ellipticity^［48］： （i）The unit structure of the device and the spatial distribution of the unit structure； （ii）The patterned Au couples with specific handedness of circularly polarized light， resulting in localized temperature enhancement. （b）A chiral graphene mid-infrared optoelectronic detector^［44］： （i）Schematic diagram of the device structure and electrical connections； （ii）The device exhibits photoresponses of equal intensity but opposite direction for left- and right-handed circular polarized light. （c）Plasmonic nanocircuits capable of circularly polarized photodetection^［49］： （i）schematic of the structure of the device and the energy band structure of the Ge detector； （ii）Electric field distribution of the device under illumination with different handedness of circular polarized light； （iii）Output intensities of the two channels at different polarization states； and （iv）polarization-differential photocurrents

Fig. 5. （a）Graphene-Si full-Stokes detector integrated with chiral plasmonic metasurfaces^［18］： （i）schematic of the device structure and electrical connections； （ii）scanning Electron Microscopy （SEM）image of the device； （iii）polarization-dependent characteristics of the photocurrents generated by the four sub-pixels. （b）mid-infrared full-Stokes polarimeter based on PTE^［41］： （i）structural parameters of the metasurfaces and optical image； （ii）Two-dimensional plot of Port 1 and Port 2 under different azimuthal angle θ and ellipticity angle φ； （c）on-chip full-Stokes polarimeter based on optoelectronic polarization eigenvectors^［17］： （i）schematic of the device structure and electrical connections； （ii）the optoelectronic conversion matrix and the r.m.s.e. values of the Stokes vector components at different wavelengths. （d）full-Stokes polarimeter using only 2D materials， and their incident light needs to be tilted： （i）full-Stokes polarimeter based on SL-MoS₂/FL-MoS₂ heterostructure^［19］； （ii）full-Stokes polarimeter based on chiral perovskites^［54］

Fig. 6. （a）Structure diagram of a multidimensional optoelectronic detector based on a TDBG and a diagram of an artificial neural network^［55］. （b）broadband multidimensional optoelectronic detector based on metasurfaces^［56］： （i）SEM image of the detector， with three ports integrated with metasurfaces of different structures； （ii）polarization-dependent photocurrent at wavelengths of 1.55 μm， 4 μm， and 7 μm at the three ports. （c）multidimensional optoelectronic detector based on twisted b-AsP heterojunctions^［57］： （i）structural diagram of the detector and electrical connection diagram； （ii）polarization- and wavelength-dependent responsivity at the two ports of the detector. （d）misaligned unipolar barrier photodetector^［58］： （i）structure diagram of the detector； （ii）polarization-dependent photocurrent under bias voltages of 0.4 V and -0.4 V

Fig. 7. （a）Trilobite-inspired neural nanophotonic light-field camera with extreme depth-of-field^［59］：（i）Optical microscope image and SEM image of the bioinspired photonic spin-multiplexed metalens array. （ii）Conceptual sketch of the light-field imaging camera and the working principle of the system with metalens array achieving spin-dependent bifocal light-field imaging. （iii）The rendered center-of-view images for LCP， RCP， and natural light. （b）Chip-integrated metasurface full-Stokes polarimetric imaging sensor^［50］： （i）Image of the full Stokes polarimetric CMOS imaging sensor. （ii）A full Stokes polarization image of 3D glasses against an unpolarized background. （c）Dispersion-assisted multidimensional photodetector^［60］： （i）Simultaneous mapping of polarization and spectral information in single-shot imaging； （ii）Schematic of the deep residual network； （iii）Detection of targets with multiple polarization and wavelength information using the multidimensional spectral polarization imager