Journal of Infrared and Millimeter Waves, Volume. 44, Issue 3, 371(2025)

Advances in integrated polarization detectors with innovative features

Yong-Hao BU1,2, Jing ZHOU1,2、*, Jie DENG1,2, Ruo-Wen WANG1,2, Tao YE1,2, Meng-Die SHI1,2, Jun-Wei HUANG1,2, Yu-Jie ZHANG1,2, Jun NING1,2, Wei LU1,2, and Xiao-Shuang CHEN1,2、**
Author Affiliations
  • 1State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
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    The polarization properties of light are widely applied in imaging, communications, materials analysis, and life sciences. Various methods have been developed that can measure the polarization information of a target. However, conventional polarization detection systems are often bulky and complex, limiting their potential for broader applications. To address the challenges of miniaturization, integrated polarization detectors have been extensively explored in recent years, achieving significant advancements in performance and functionality. In this review, we focus mainly on integrated polarization detectors with innovative features, including infinitely high polarization discrimination, ultrahigh sensitivity to polarization state change, full Stokes parameters measurement, and simultaneous perception of polarization and other key properties of light. Lastly, we discuss the opportunities and challenges for the future development of integrated polarization photodetectors.

    Keywords

    Introduction

    • Table 1. Challenges in the development of integrated polarization detectors: reasons and solutions

      Table 1. Challenges in the development of integrated polarization detectors: reasons and solutions

      ChallengesReasonsNew theories, methods, and structures
      Part 1The insufficient PERLess efficient suppression of the residual photoresponse.

      1. Light field-electric field joint manipulation

      2. Optoelectronic silent state

      3. Band modulation using heterostructures

      Part 2Less sensitive to polarization state changesExcessive noise in the devicePolarization balanced mode detection
      Part 3

      1. Only a small number of polarization states can be perceived.

      2. Large reconstruction errors in the Stokes parameters

      1. Lack of theoretical models to describe the intrinsic correlation between incident optical Stokes vectors and photoresponse.

      2. Insufficient accuracy of traditional reconstruction algorithms.

      1. Superpixel detectors

      2. Optoelectronic polarization eigenvector

      3. Use of artificial intelligence algorithms

      Part 4Insufficient perceptible dimensions of light field information

      1. Conventional detectors only perceive the intensity information.

      2. Multidimensional information reconstruction is difficult.

      1. Development of single-pixel detectors capable of perceiving multi-dimensional information.

      2. Integrate metasurfaces on commercial cameras

      3. Use artificial intelligence algorithms

    Light is a type of transverse electromagnetic wave, and polarization is one of its most fundamental properties, which has been widely and deeply applied in many fields, such as imaging1-4, communication5-10, material analysis11, and life sciences12-15. Polarized light mainly includes linear polarized light and circular polarized light. Circular polarized light can be further divided into Left-handed Circularly Polarized (LCP)light and Right-handed Circularly Polarized (RCP)light. The Polarization Extinction Ratio (PER)is one of the most critical performance indicators in evaluating polarization detectors or polarization detection systems. The PER is defined as the ratio of the responsivity for the primary detection polarization state to that for the polarization state orthogonal to the primary detection polarization state16. This indicator is used to characterize the polarization discrimination ability of the polarization detector. In practical applications, a commonly used method for measuring the polarization information of a target is the Stokes parameter method, which includes four Stokes parameters: S0S1S2, and S317-19. Here, S0 represents the total intensity of the polarized light, S1 indicates the difference in components of the polarized light along the 0° and 90° directions, S2 represents the difference in components along the 45° and 135° directions, while S3 denotes the intensity difference between right-handed circular polarized light and left-handed circular polarized light20.

    Traditional polarization detectors are divided into two categories: ‘division of time’ and ‘division of amplitude’21. A division-of-time polarimeter measures the intensities of different polarization states sequentially over time by rotating a waveplate or polarizer, significantly restricting temporal resolution. In contrast, a division-of-amplitude polarimeter separates incident light into distinct photosensitive regions using a sophisticated optical system, leading to a large and complex structure. The demand for real-time polarization imaging and the miniaturization of polarimeters has driven extensive research into the development of integrated polarization detectors16-1722-26. However, the ultra-compact structure, light diffraction, scattering, and near-field light absorption pose some challenges for the development of integrated polarization detectors: (1)the PERs of integrated polarization detectors are usually 2 to 3 orders of magnitude lower than that of a polarization detection system consisting of discrete polarization optics and a detector; (2)integrated polarization detectors are much less sensitive to changes in polarization state than their traditional counterparts; (3)most integrated polarization detectors can only discriminate a few polarization states, but cannot measure the full Stokes parameters. Furthermore, with the increasing demands for multi-dimensional information perception, integrated polarization detectors are desired to be able to simultaneously perceive other key properties of light along with polarization.

    To address the challenges outlined above, researchers have proposed various new theories, methods, and structures, leading to integrated polarization detectors with innovative features and high performance. This review focuses on these innovative advancements, systematically presenting cutting-edge developments in integrated polarization detectors. Topics include integrated polarization detectors with ∞/-∞ PERs, those with ultra-high sensitivity to polarization state changes, those capable of one-shot full Stokes parameter measurement, and those capable of simultaneously sensing polarization along with other key optical properties. The reasons and solutions for these challenges are summarized in Table 1. Finally, the paper discusses future opportunities and challenges in the development of integrated polarization optoelectronic detectors.

    1 Polarimeter with infinite PER

    Conventional polarization detection systems, typically equipped with high-quality polarization optical elements, can achieve linear PERs (LPERs)higher than 104. In contrast, the LPERs of integrated polarization detectors are 2 to 3 orders of magnitude lower than that of a polarization detection system consisting of discrete polarization optics and a detector27-34. The situation becomes even worse for integrated circular polarization detectors, whose circular polarization extinction ratios (CPERs)are typically lower than five16. The insufficient PER of an integrated polarization detector is due to less efficient suppression of the photoresponse to the light in the polarization state orthogonal to the primary detection polarization state, the so-called residual photoresponse16. Recently, new effects of polarization photoresponse23-2435-36, novel polarization detection principles1626, and innovative materials and device structures37-39 have been proposed, leading to ∞/-∞ PER.

    To achieve ∞/-∞ PER, the critical factor is to ensure that the residual photoresponse becomes zero. This task is very difficult to achieve by relying solely on the light field manipulation provided by the integrated polarization discriminative structure. The light diffraction, scattering, and near-field absorption at an integrated polarization detector would inevitably generate residual photoresponse. Recent studies reveal that light field-electric field joint manipulation becomes a promising route to achieve this task.

    Integration of artificial optical nanoantennas on photosensitive materials is a common method to endow or change their polarization-sensitive properties1725-263540-41. Additionally, artificial optical nanoantennas can effectively enhance the absorption rate of photosensitive materials, thereby improving the photoresponsivity or specific detectivity of photodetectors16264042-45. The in-sensor superposition of nanoantenna induced vectorial non-local photoresponses can achieve zero residual photoresponse and thus ∞/-∞ PER.

    In 2021, Wei et al.23 proposed a mid-infrared semimetal polarization detector with configurable polarity transition and (-1 to ∞/-∞ to 1)PER based on manipulation of vectorial non-local photoresponse (Fig. 1(a)). Both the intensity and direction of the non-local vectorial photocurrent is modulated by the polarization state of the incident light, and the total photocurrent is the superposition of all the vectorial non-local photocurrents. This principle is known as the artificial bulk photovoltaic effect (BPVE). By adjusting the angle of the tapered nanoantenna or choosing different metals to make up the nanoantennas, the PER can be configured to be all possible numbers in the range (-1 to ∞/-∞ to 1).

    (a)Mid-infrared semimetal polarization detector with configurable polarity transition[23]: (i)Schematic of the detector structure and electrical connections; (ii)Polarization-dependent optical response under different gate voltages. When Vg = -23 V, the photoresponse induced by 135° polarized light equals 0; (iii)and (iv)Nonlocal vector photocurrent induced by nanoantennas under 0° and 90° polarized light. (b)Te nanoribbon infrared photodetector integrated with a perfect plasmonic absorber on one electrode[25]: (i)Schematic of the device structure; (ii)Polarization-dependent optical absorption characteristics of the perfect plasmonic absorber; (iii)Heating one end of Te using the perfect plasmonic absorber; (iv)Polarization-dependent photoresponse characteristics under different power. (c)Configurable integrated linear polarization detector with a set of orthogonal gratings[32]: (i)Schematic of the device structure; (ii)Modulation of polarization-sensitive characteristics of the detector by adjusting the gate voltage; (iii)Single-pixel imaging. (d)Configurable integrated circular polarization detector based on the optoelectronic silent state[16]: (i)Schematic of the device structure; (ii)Adjustment of the photoresponse of the detector by changing the light spot position, where the photocurrent generated by right-handed circular polarized light can be reduced to 0; (iii)Noise of the device under different polarization angles; (iv)Contour of CPER (wavelength λ, frequency f)of the detector dimer in the LCP-responsive ultrahigh-CPER mode based on experimental data

    Figure 1.(a)Mid-infrared semimetal polarization detector with configurable polarity transition23: (i)Schematic of the detector structure and electrical connections; (ii)Polarization-dependent optical response under different gate voltages. When Vg = -23 V, the photoresponse induced by 135° polarized light equals 0; (iii)and (iv)Nonlocal vector photocurrent induced by nanoantennas under 0° and 90° polarized light. (b)Te nanoribbon infrared photodetector integrated with a perfect plasmonic absorber on one electrode25: (i)Schematic of the device structure; (ii)Polarization-dependent optical absorption characteristics of the perfect plasmonic absorber; (iii)Heating one end of Te using the perfect plasmonic absorber; (iv)Polarization-dependent photoresponse characteristics under different power. (c)Configurable integrated linear polarization detector with a set of orthogonal gratings32: (i)Schematic of the device structure; (ii)Modulation of polarization-sensitive characteristics of the detector by adjusting the gate voltage; (iii)Single-pixel imaging. (d)Configurable integrated circular polarization detector based on the optoelectronic silent state16: (i)Schematic of the device structure; (ii)Adjustment of the photoresponse of the detector by changing the light spot position, where the photocurrent generated by right-handed circular polarized light can be reduced to 0; (iii)Noise of the device under different polarization angles; (iv)Contour of CPER (wavelength λ, frequency f)of the detector dimer in the LCP-responsive ultrahigh-CPER mode based on experimental data

    In 2022, Dai et al.25 proposed an infrared detector with ultra-high polarization sensitivity (Fig. 1(b)). By leveraging the strong anisotropic absorption of the perfect plasmonic absorber in the infrared region and the localized heating induced by finite-size effects, the detector exhibits polarization-dependent, self-driven photoresponse based on the photothermoelectric effect (PTE). The operating wavelength is 8 μm. When the polarization direction of the incident light is perpendicular to the resonance direction of the perfect plasmonic absorber, the incident light is reflected. As a result, the Te nanoribbon have no temperature difference throughout the channel, the optical response generated by the PTE is zero, and the PER of the device achieves ∞/-∞.

    In 2024, Dai et al.26 proposed a dynamically reconfigurable polarimetry based on in-sensor differentiation of two self-powered photoresponses with orthogonal polarization dependence and tunable responsivities (Fig. 1(c)). Such a device can be electrostatically configured in an ultrahigh PER mode, where the PER tends to ∞/-∞. Moreover, the device achieves a polarization angle sensitivity of 0.51 mA·W-1·degree-1 and a specific polarization angle detectivity of 2.8×105 cm·Hz1/2·W-1·degree-1. This scheme is demonstrated throughout the near-to-long-wavelength infrared range.

    In addition to integrated linear polarization detectors with ∞/-∞ LPERs, integrated linear polarization detectors with ∞/-∞ CPERs have also been invented. In 2023, Bu et al.16 reported a configurable integrated circular polarization detector based on the optoelectronic silent state, and operating in the NIR region, as shown in Fig. 1(d). By adjusting the ratio of the optical power received by the two chiral plasmonic nanocavities, the total photoresponse of the device is configured to be zero when the incident light is LCP or RCP, thereby the CPER tends to ∞/-∞. Bu et al.1626 proposed the concept of the optoelectronic silent state. In this state, the detector generates not only zero photoresponse but also significantly suppressed noise. The detector can be optoelectronic silent for different polarization states of the incident light, including the randomly polarized state. When the detector is set to be optoelectronic silent for the randomly polarized state of the incident light, a high infrared background is eliminated during the detection and a target in a different polarization state is significantly highlighted compared to the suppressed background.

    After inventing these (∞/-∞)-PER detectors, people realize that the PER is no longer an effective indicator to characterize the polarization discrimination performance of polarization detectors. In this context, Bu et al. define a new PER by taking into account the noise of the detector when the residual photoresponse become zero. As shown in the following equation, the new PER is defined as the ratio of the photoresponse of the detector when illuminated by light in the primary detection polarization state to the noise of the detector when illuminated by light in the polarization state orthogonal to the primary detection polarization state.

    PERnew=Iph(PDPS)Inoise(PDPS)

    where PDPS is the acronym of “primary detection polarization state”, and ⊥PDPS denotes the polarization state orthogonal to the primary detection polarization state. Since the detector in the optoelectronic silent state has a significantly suppressed noise, the PERnew still exceeds the PERs of conventional integrated polarization detectors by more than 4 orders of magnitude (Fig. 1(d)).

    Heterojunctions with special band structures are also an effective way to achieve ∞/-∞ PERs. In 2024, Li et al.37 proposed a polarization photodetector based on the CdSb2Se3Br2/WSe2 heterojunction (Fig. 2(a)). In the CdSb2Se3Br2/WSe2 heterostructure, gate voltage variations control the anisotropic band alignment. This leads to a polarization-dependent shift in the photo-induced threshold voltage (Vth), caused by the anisotropic carrier transition. The significant Vth shift reverses the polarization photovoltaic current, allowing the PER to switch from positive (unipolar regime)to negative (bipolar regime), covering the entire range of values (1→∞/-∞→-1).

    (a)The polarization photodetector based on CdSb2Se3Br2/WSe2 heterojunction[37]: (i)schematic of the detector structure; (ii)achieving an infinite PER near gate voltages of -20 V and -6 V. (b)photovoltaic heterostructure based on 1T’-MoTe2 and WSe2[38]: (i)schematic of the detector materials; (ii)Polarization-dependent photocurrent under different gate voltages. (c)black phosphorus photodetector with BPVE defined by ferroelectric domains[39]: (i)schematic of the detector structure and polarization pattern of the ferroelectric domains; (ii)dependence of the photocurrent on bias voltage under different polarization angles

    Figure 2.(a)The polarization photodetector based on CdSb2Se3Br2/WSe2 heterojunction37: (i)schematic of the detector structure; (ii)achieving an infinite PER near gate voltages of -20 V and -6 V. (b)photovoltaic heterostructure based on 1T’-MoTe2 and WSe238: (i)schematic of the detector materials; (ii)Polarization-dependent photocurrent under different gate voltages. (c)black phosphorus photodetector with BPVE defined by ferroelectric domains39: (i)schematic of the detector structure and polarization pattern of the ferroelectric domains; (ii)dependence of the photocurrent on bias voltage under different polarization angles

    In the same year, Wang et al.38 discovered a polarization- and gate-tunable optoelectronic reverse in 2D semimetal/semiconductor photovoltaic heterostructure (Fig. 2(b)). By adjusting the gate voltage, the Fermi level in ambipolar WSe2 can be tuned between the conduction band (CB)and valence band (VB). This enables easy control and inversion of the built-in electric field, resulting in sign reversal of polarization-sensitive photocurrent. With the in-plane anisotropic structure of 1T′-MoTe2, the device demonstrates highly efficient polarimetric detection, achieving a PER value of up to ∞/-∞.

    Combining ferroelectric materials with 2D vdW materials can significantly enhance the performance of polarization detectors3946. In 2024, Wu et al.39 proposed a polarization photodetector based on black phosphorus. As shown in Fig. 2(c), the authors found that "T"-shaped ferroelectric domain array broke the intrinsic C3v symmetry of MoTe2 and induced an asymmetric carrier distribution in MoTe2. By applying different bias voltages, the photoresponse corresponding to different polarization states can be eliminated (Fig. 2(c)(ii)), leading to ∞/-∞ PER.

    2 Ultrahigh sensitivity to polarization state changes

    Noise-equivalent polarization angle difference (NEΔχ, unit: degree·Hz-1/2)is a parameter used to assess the sensitivity of a polarization detector to changes in the polarization state of the incident light. It is related to noise (Inoise, unit: A Hz-1/2)and polarization-angle sensitivity (PAS, unit: A degree-1). The calculation formula is:

    NEΔχ=InoisePAS=AHz-1/2Adegree-1=degreeHz-1/2.

    NEΔχ refers to the minimum fluctuation in the photoresponse caused by changes in the incident light's polarization state that the polarization detector can resolve. The lower the value, the stronger the capability of the device to sense changes in the polarization state23.

    For ordinary polarization photodetectors, due to their extinction ratio is not high enough to achieve complete shielding of the photocurrent, there is always a current flowing in the device. As a result, the device is often accompanied by substantial noise, such as 1/f noise, shot noise, thermal noise, etc1626. Excessive noise reduces the noise-equivalent polarization-angle rotation performance of the device. In contrast, for polarization detectors with infinite PER, their photocurrent minima can be reduced to zero, and the optoelectronic silent state helps maintain noise at a low level. However, at this point, the polarization-angle sensitivity of the device tends to be zero, and so the noise-equivalent polarization-angle reaches infinity, which prevents the detector from sensing small changes in the polarization angle of the incident light. As a result, the minima of noise-equivalent polarization-angle rotation tends to occur in polarization-dependent balanced detectors, which are characterized by a PER equal to -12435. In this type of polarization detector, at the point of photocurrent polarity reversal, the polarization-angle sensitivity reaches maximum while the noise intensity remains at the lowest level.

    In 2020, Wei et al.35 proposed a zero-bias mid-infrared graphene photodetector with bulk photoresponse and calibration-free polarization detection, which exhibits cascaded polarization-sensitive photoresponse under uniform illumination, simulating the BPVE. The device's responsivity is three orders of magnitude higher than that of photodetectors based on traditional bulk photovoltaic effects, with a noise-equivalent power of 0.12 nW Hz-1/2. As shown in Fig. 3(a), the authors fabricated a metal nanoantenna device with threefold rotation symmetry. The responsivities of the three sets of detection units are the same, with a phase difference of 60° between each set, and the PER of each set of devices is -1.

    (a)Zero-bias mid-infrared graphene photodetector with bulk photoresponse and calibration-free polarization detection[35]: (i)schematic diagram of the device structure and electrical connections; (ii)polarization-dependent photocurrent measured at the three ports of the device, all showing a polarization extinction ratio of -1. (b)geometric filterless photodetector[24]: (i)illustration of the T-antenna integrated on graphene; (ii)photocurrent response of the device to different Stokes parameters. (c)zero-bias long-wave infrared nanoantenna-mediated graphene photodetector[47]: (i)schematic representation of the device structure; (ii)bipolar photocurrent response dependent on polarization. (d)circularly polarized light photodetector using dielectric achiral nanostructures[36]: (i)schematic diagram of the device structure; (ii)coupling differences of dielectric achiral nanostructures on left- and right-handed circularly polarized light

    Figure 3.(a)Zero-bias mid-infrared graphene photodetector with bulk photoresponse and calibration-free polarization detection35: (i)schematic diagram of the device structure and electrical connections; (ii)polarization-dependent photocurrent measured at the three ports of the device, all showing a polarization extinction ratio of -1. (b)geometric filterless photodetector24: (i)illustration of the T-antenna integrated on graphene; (ii)photocurrent response of the device to different Stokes parameters. (c)zero-bias long-wave infrared nanoantenna-mediated graphene photodetector47: (i)schematic representation of the device structure; (ii)bipolar photocurrent response dependent on polarization. (d)circularly polarized light photodetector using dielectric achiral nanostructures36: (i)schematic diagram of the device structure; (ii)coupling differences of dielectric achiral nanostructures on left- and right-handed circularly polarized light

    Ordinary circularly polarization detectors with integrated chiral nanostructures often fail to avoid the response caused by linear polarized light. To address this issue, in 2022, Wei et al.24 proposed a geometric filterless photodetectors for mid-infrared spin light. As shown in Fig. 3(b), the polarization-dependent photocurrent demonstrates that the detector is also a circular polarization-balanced detector, capable of blocking responses to S1 and S2 parameters. A self-powered optical response rate of 392 V W⁻¹. At a small incident power of 1.8 μW, an optical ellipticity detectivity as low as 0.03 degree Hz-1/2 at room temperature.

    In 2023, Xie et al.47 proposed a zero-bias long-wave infrared nanoantenna-mediated graphene photodetector for polarimetric and spectroscopic sensing (Fig. 3(c)). The PER of the detector is -1. By adjusting the near-field distribution of the nanoantenna, the absorption rate of the detector was improved. The noise-equivalent polarization-angle rotation of approximately 0.05° Hz-1/2 at the power of 26.6  μW. In addition to the use of metals to fabricate nanoantennas, the idea of preparing polarization detectors by directly processing photosensitive materials has also gained much attention in recent years. In 2024, Zhang et al.36 reported a high-discrimination, broadband circular polarization photodetector using dielectric achiral nanostructures. As shown in Fig. 3(d), the authors directly etched achiral nanostructures on Te nanosheets. The noise equivalent light ellipticity difference reaches a minimum of 0.03° Hz-1/2 at the cut-off frequency.

    In addition to the artificial BPVE, polarization-dependent balanced detection can also be achieved using a pair of orthogonal or chiral light-coupling structures4448-49. In 2015, Lu et al.48 proposed a thermopile detector of the light ellipticity (Fig. 4(a)). By constructing a square array, the photoresponses generated by the Stokes parameters S1 and S2 are canceled out, enabling the detector to directly output a bipolar photovoltage proportional to the Stokes parameter S3.

    (a)Thermopile detector capable of measuring optical ellipticity[48]: (i)The unit structure of the device and the spatial distribution of the unit structure; (ii)The patterned Au couples with specific handedness of circularly polarized light, resulting in localized temperature enhancement. (b)A chiral graphene mid-infrared optoelectronic detector[44]: (i)Schematic diagram of the device structure and electrical connections; (ii)The device exhibits photoresponses of equal intensity but opposite direction for left- and right-handed circular polarized light. (c)Plasmonic nanocircuits capable of circularly polarized photodetection[49]: (i)schematic of the structure of the device and the energy band structure of the Ge detector; (ii)Electric field distribution of the device under illumination with different handedness of circular polarized light; (iii)Output intensities of the two channels at different polarization states; and (iv)polarization-differential photocurrents

    Figure 4.(a)Thermopile detector capable of measuring optical ellipticity48: (i)The unit structure of the device and the spatial distribution of the unit structure; (ii)The patterned Au couples with specific handedness of circularly polarized light, resulting in localized temperature enhancement. (b)A chiral graphene mid-infrared optoelectronic detector44: (i)Schematic diagram of the device structure and electrical connections; (ii)The device exhibits photoresponses of equal intensity but opposite direction for left- and right-handed circular polarized light. (c)Plasmonic nanocircuits capable of circularly polarized photodetection49: (i)schematic of the structure of the device and the energy band structure of the Ge detector; (ii)Electric field distribution of the device under illumination with different handedness of circular polarized light; (iii)Output intensities of the two channels at different polarization states; and (iv)polarization-differential photocurrents

    In 2019, Peng et al.44 proposed a chiral graphene-based mid-infrared photodetector. As shown in Fig. 4(b), the device integrates nanoantennas with opposite chirality on source and drain electrodes. Surface plasmon resonance enhances the absorption rate of graphene by 17 times, and the device exhibits equal but opposite photoresponses to left- and right-handed circular polarized light. In the same year, Thomaschewski et al.49 reported a study on circularly polarized light detection using plasmonic nanocircuits. As shown in Fig. 4(c), the authors utilized plasmonic achiral nanocouplers to separate left- and right-handed circularly polarized light and couple them into two plasmonic waveguides. The photocurrents generated by two germanium (Ge)detectors were then processed externally using differential calculations, achieving high-precision resolution of circularly polarized light.

    3 On-chip full-Stokes polarimeter

    The demand for real-time full Stokes polarimetric imaging has attracted a lot of research interest. To address this demand, researchers have tried to combine multiple independently polarization detection pixels into a superpixel50-53 and reconstruct the Stokes parameters of the incident light based on the photoresponses of the subpixels and a specific algorithm. This method would reduce the imaging resolution of the detector since many of the pixels originally used for imaging are used to probe the polarization state. Thus, the main challenge lies in designing the polarization dependent optoelectronic properties of the individual pixels to achieve the most accurate acquisition of full Stokes parameters while minimizing the number of the pixels.

    For the fabrication of superpixel detectors, integrating different polarization-sensitive structures in different regions of one detection material is a convenient and common approach. In 2020, Li et al.18 reported the monolithic full-stokes near-infrared polarimetry with a chiral plasmonic metasurface integrated graphene-silicon photodetector. The working wavelength is 1 550 nm. As shown in Fig. 5(a), the same metasurface, arranged in different orientations and handednesses, is integrated with each of the four pixels. The four pixels share a common ground terminal, i.e. the Si substrate. Based on the photocurrent values of the four pixels and an empirical algorithm, the full Stokes parameters are reconstructed in one shot. However, the root mean square errors (RMSEs)of the reconstructed S1S2 and S3, which are 13%, 17% and 17%, respectively, are not sufficiently low for practical applications. In 2022, Dai et al.41 proposed an on-chip mid-infrared photothermoelectric detector with PdSe2 as the channel material. As shown in Fig. 5(b), the device integrates four metasurfaces with different polarization dependent optoelectronic properties. In the experiment, the average measurement errors for Stokes parameters S1S2, and S3 were 14.2%, 15.2%, and 5.4%, respectively.

    (a)Graphene-Si full-Stokes detector integrated with chiral plasmonic metasurfaces[18]: (i)schematic of the device structure and electrical connections; (ii)scanning Electron Microscopy (SEM)image of the device; (iii)polarization-dependent characteristics of the photocurrents generated by the four sub-pixels. (b)mid-infrared full-Stokes polarimeter based on PTE[41]: (i)structural parameters of the metasurfaces and optical image; (ii)Two-dimensional plot of Port 1 and Port 2 under different azimuthal angle θ and ellipticity angle φ; (c)on-chip full-Stokes polarimeter based on optoelectronic polarization eigenvectors[17]: (i)schematic of the device structure and electrical connections; (ii)the optoelectronic conversion matrix and the r.m.s.e. values of the Stokes vector components at different wavelengths. (d)full-Stokes polarimeter using only 2D materials, and their incident light needs to be tilted: (i)full-Stokes polarimeter based on SL-MoS2/FL-MoS2 heterostructure[19]; (ii)full-Stokes polarimeter based on chiral perovskites[54]

    Figure 5.(a)Graphene-Si full-Stokes detector integrated with chiral plasmonic metasurfaces18: (i)schematic of the device structure and electrical connections; (ii)scanning Electron Microscopy (SEM)image of the device; (iii)polarization-dependent characteristics of the photocurrents generated by the four sub-pixels. (b)mid-infrared full-Stokes polarimeter based on PTE41: (i)structural parameters of the metasurfaces and optical image; (ii)Two-dimensional plot of Port 1 and Port 2 under different azimuthal angle θ and ellipticity angle φ; (c)on-chip full-Stokes polarimeter based on optoelectronic polarization eigenvectors17: (i)schematic of the device structure and electrical connections; (ii)the optoelectronic conversion matrix and the r.m.s.e. values of the Stokes vector components at different wavelengths. (d)full-Stokes polarimeter using only 2D materials, and their incident light needs to be tilted: (i)full-Stokes polarimeter based on SL-MoS2/FL-MoS2 heterostructure19; (ii)full-Stokes polarimeter based on chiral perovskites54

    In order to enhance the accuracy of full Stokes parameters detection, a proper formalism describing the polarization-dependent photoresponses of metasurface-integrated photodetectors is required. In 2024, Deng et al.17 proposed the concept of an optoelectronic polarization eigenvector (OPEV)The OPEV, which is a 1×4 vector, expresses the linear relationship between the incident Stokes vector and the photocurrent of a detector. As shown in Fig. 5(c), each subpixel contains an in-situ integrated plasmonic metasurface and corresponds to a distinct OPEV. Combined with a machine learning algorithm, this polarimeter achieves full Stokes parameters reconstruction over the entire polarization state range at any light intensity, with a root mean square error less than 1% for each Stokes parameter.

    Using only anisotropic or chiral materials to form full-Stokes polarimeters is an effective way to further simplify the device structure (Fig. 5(d)). In 2021, Chen et al.19 proposed a self-powered, filterless on-chip full Stokes polarimeter based on a monolayer MoS2/few-layer MoS2 homojunction. This design allows a full-Stokes polarimeter without an additional filter layer. The RMSEs of the reconstructed Stokes parameters S1S2, and S3 are >5%, >4.8%, and >6.7%, respectively. It should be noted that this device is not a one-shot polarimeter, and it needs to be rotated around the center axis of the sample holder during operation. In the same year, Ma et al.54 reported a full-Stokes polarimeter based on chiral Perovskite single crystal ((S- and R-MBA)2PbI4, where MBA = C6H5C2H4NH3). It is important to note that, in order to detect all the linear polarization parameters (S1 and S2), the incident light's tilt angle needs to be continuously adjusted during testing. The average error of the reconstructed Stokes parameters from this detector ranges from 7.5% to 26%.

    4 Increasing the perceptible information dimensions of the polarimeters

    Polarization detectors are primarily used to sense the polarization state of light, often overlooking other fundamental properties of light such as wavelength and phase. Expanding the information dimension that polarization detectors can perceive is an important development direction.

    4.1 Multidimensional detection enabled by a single-pixel detector

    In 2022, Ma et al.55 first observed the bulk photovoltaic effect in twisted double bilayer graphene (TDBG), which is induced by the moiré-induced strong symmetry breaking and quantum geometric contribution. With the help of artificial neural networks, the authors analyzed and reconstructed the photocurrent, achieving simultaneous detection of the wavelength, polarization, and power of light (Fig. 6(a)).

    (a)Structure diagram of a multidimensional optoelectronic detector based on a TDBG and a diagram of an artificial neural network[55]. (b)broadband multidimensional optoelectronic detector based on metasurfaces[56]: (i)SEM image of the detector, with three ports integrated with metasurfaces of different structures; (ii)polarization-dependent photocurrent at wavelengths of 1.55 μm, 4 μm, and 7 μm at the three ports. (c)multidimensional optoelectronic detector based on twisted b-AsP heterojunctions[57]: (i)structural diagram of the detector and electrical connection diagram; (ii)polarization- and wavelength-dependent responsivity at the two ports of the detector. (d)misaligned unipolar barrier photodetector[58]: (i)structure diagram of the detector; (ii)polarization-dependent photocurrent under bias voltages of 0.4 V and -0.4 V

    Figure 6.(a)Structure diagram of a multidimensional optoelectronic detector based on a TDBG and a diagram of an artificial neural network55. (b)broadband multidimensional optoelectronic detector based on metasurfaces56: (i)SEM image of the detector, with three ports integrated with metasurfaces of different structures; (ii)polarization-dependent photocurrent at wavelengths of 1.55 μm, 4 μm, and 7 μm at the three ports. (c)multidimensional optoelectronic detector based on twisted b-AsP heterojunctions57: (i)structural diagram of the detector and electrical connection diagram; (ii)polarization- and wavelength-dependent responsivity at the two ports of the detector. (d)misaligned unipolar barrier photodetector58: (i)structure diagram of the detector; (ii)polarization-dependent photocurrent under bias voltages of 0.4 V and -0.4 V

    In 2024, Jiang et al.56 proposed a broadband multidimensional optoelectronic detector based on metasurfaces. As shown in Fig. 6(b), the authors designed a three-port device with differently structured metasurfaces integrated into the graphene photodetector at each port. By combining machine learning and the Adam optimization algorithm, the detector successfully achieved the resolution of circularly polarized light in the wavelength range of 1-8 μm. In the same year, Wang et al.57 used two twisted black arsenic–phosphorus (b-AsP)homojunction to achieve polarization and wavelength detection (Fig. 6(c)). The responsivity of the device is influenced by both wavelength and polarization state. The authors demonstrated simultaneous detection of both polarization and wavelength by plotting the dependence of responsivity on wavelength and polarization state. Zhang et al.58 developed a multidimensional optical information acquisition device based on a misaligned unipolar barrier photodetector, consisting of a b-AsP/MoS2/BP stacked structure (Fig. 6(d)). The b-AsP/MoS2 and BP/MoS2 heterojunctions can be adjusted by a bias voltage, enabling the sensing of both polarization and spectral information.

    4.2 Metasurface integrated polarimetric cameras

    Integrating metasurfaces with commercial cameras combines the focal plane array technology with the advanced optical properties of metasurfaces, providing a new solution for high-precision detection of multidimensional optical information.

    In 2022, Fan et al.59 introduced an innovative nanophotonic light-field camera inspired by the optical structure of Trilobite eyes (Fig. 7(a)). This camera incorporates a spin-multiplexed bifocal metalens array, capable of capturing high-resolution light-field images with an unprecedented depth-of-field range, spanning from centimeters to kilometers. The metalens array operates efficiently across a wide wavelength range from 460 nm to 700 nm, achieving broadband photonic spin-multiplexing in the visible spectrum.

    (a)Trilobite-inspired neural nanophotonic light-field camera with extreme depth-of-field[59]:(i)Optical microscope image and SEM image of the bioinspired photonic spin-multiplexed metalens array. (ii)Conceptual sketch of the light-field imaging camera and the working principle of the system with metalens array achieving spin-dependent bifocal light-field imaging. (iii)The rendered center-of-view images for LCP, RCP, and natural light. (b)Chip-integrated metasurface full-Stokes polarimetric imaging sensor[50]: (i)Image of the full Stokes polarimetric CMOS imaging sensor. (ii)A full Stokes polarization image of 3D glasses against an unpolarized background. (c)Dispersion-assisted multidimensional photodetector[60]: (i)Simultaneous mapping of polarization and spectral information in single-shot imaging; (ii)Schematic of the deep residual network; (iii)Detection of targets with multiple polarization and wavelength information using the multidimensional spectral polarization imager

    Figure 7.(a)Trilobite-inspired neural nanophotonic light-field camera with extreme depth-of-field59:(i)Optical microscope image and SEM image of the bioinspired photonic spin-multiplexed metalens array. (ii)Conceptual sketch of the light-field imaging camera and the working principle of the system with metalens array achieving spin-dependent bifocal light-field imaging. (iii)The rendered center-of-view images for LCP, RCP, and natural light. (b)Chip-integrated metasurface full-Stokes polarimetric imaging sensor50: (i)Image of the full Stokes polarimetric CMOS imaging sensor. (ii)A full Stokes polarization image of 3D glasses against an unpolarized background. (c)Dispersion-assisted multidimensional photodetector60: (i)Simultaneous mapping of polarization and spectral information in single-shot imaging; (ii)Schematic of the deep residual network; (iii)Detection of targets with multiple polarization and wavelength information using the multidimensional spectral polarization imager

    In 2023, Zuo et al.50 introduced a chip-integrated metasurface-based Full Stokes Polarimetric Imaging sensor (MetaPolarIm), which combines an ultrathin (~600 nm)Metasurface Polarization Filter array (MPFA)with a visible imaging sensor (Fig. 7(b)). This sensor was fabricated using CMOS-compatible processes, making it highly scalable for mass production. The MPFA features a hybrid dielectric-metal chiral metasurface design along with double-layer nanograting polarizers, providing high polarization sensitivity and accuracy. In practical experiments, the MetaPolarIm sensor achieved measurement errors of less than 2% for all Stokes parameters in red and green colors under normal incidence.

    In 2024, Fan et al.60 proposed an innovative concept that leverages spatial and frequency dispersion at optical interfaces to control polarization and spectral responses in the wavevector domain, combined with deep learning methods to decode polarization and spectral information. They introduced a dispersion-assisted multidimensional detector that enables the detection of high-dimensional optical field information in a single measurement using a single device (Fig. 7(c)). This system does not rely on complex designs or fabricated metasurfaces, yet its performance matches or even exceeds that of advanced commercial polarimeters or spectrometers. This research paves the way for the practical application of high-dimensional optoelectronic detectors.

    5 Discussion and outlook

    Integrated polarization detectors have achieved notable progress, offering significant benefits in applications like improving image contrast and providing additional information about targets. However, their development encounters several challenges. For detectors integrated with photonic structures, the reliance on resonance restricts their operational wavelength range. Similarly, polarization detectors based on heterojunctions face limited material choices and persistent inaccuracies in Stokes parameter reconstruction.

    The emergence of polarization detectors with innovative features has addressed several challenges across different fields. In Table 2, we compare representative high-performance integrated polarization detectors with commercial counterparts. The results indicate that in certain application scenarios, these high-performance integrated detectors can outperform commercial devices, demonstrating significant application potential. In terms of response speed, the graphene-based polarization detector utilizing the artificial bulk photovoltaic effect is at least as fast as commercial polarimeters and can theoretically achieve an ultra-fast mid-infrared response of 500 GHz. Its optical responsivity of 27 V W-1 surpasses that of some high-speed commercial photodetectors (e.g., the Thorlabs DXM20AF 20 GHz photodetector , which has a responsivity of 0.9 A W-1). Meanwhile, the MoS2 polarimeter, based on optoelectronic polarization eigenvectors, achieves a Stokes parameter reconstruction accuracy of less than 1%, whereas the polarization accuracy of commercial polarimeters is typically around 1% (e.g., PAX1000, Thorlabs).

    In the infrared range, a major limitation of reported polarization detectors with PER values of ∞/-∞ or -1 is the lack of characterization using blackbody sources; instead, characterizations are typically conducted with high-performance lasers to assess optoelectronic properties. While lasers allow precise control over light source attributes (such as wavelength, power, spot size, and high-frequency modulation)in a laboratory setting, the resulting performance metrics are primarily suited for applications like spectral measurement, optical communication, or lidar. However, in imaging applications, the main challenge is detecting broad-spectrum, low-energy infrared radiation. The ability to respond to blackbody radiation is a key indicator of an infrared detector’s practical application potential, and thus future research efforts should continue in this direction.

    Future advancements in device fabrication could involve novel large-area, narrow-linewidth patterning techniques, such as deep ultraviolet lithography and nanoimprint technology, which could enhance the efficiency of metasurface integration on detectors. On the data processing side, the emergence of more sophisticated artificial intelligence algorithms holds promise for improving the efficiency of multi-Stokes parameter reconstruction and high-dimensional optical information processing. These advancements could significantly reduce computation time and improve reconstruction accuracy, paving the way for broader practical applications.

    • Table 2. Comparison of integrated polarization detectors with innovative features and commercial devices

      Table 2. Comparison of integrated polarization detectors with innovative features and commercial devices

      Materials

      Gr/Au

      antenna

      Gr/Au

      antenna

      MoS2/Au

      antenna

      MoS2/Au

      antenna

      PAX

      1000

      ERM 200DXM 20AF
      Responsivity15.6 V W-127 V W-10.4 mA W-10.5 mA W-10.48 A W-10.9 A W-1
      Bandwidth1.5 MHz670 GHz30 kHz51 kHz400 Hz10 Hz20 GHz

      Noise

      (Hz-1/2

      10 nV2 nV0.5 pA0.53 pA

      NEP

      (Hz-1/2

      0.64 nW124 pW1.7 nW28 pW

      Dynamic Range

      (μW)

      10-2 ~ 1020.07 ~ 3.065.7 ~ 13.310-3 ~ 104<104
      PER∞, -1∞, -1∞, -1104

      Stokes

      Parameters

      S1S1S3S1S2S3S1S2S3S1S2

      NEΔχ

      (degree Hz-1/2

      0.020.0090.01
      Ref.23351617ThorlabsThorlabsThorlabs

    6 Conclusions

    With the increasing demand for miniaturization and intelligence, integrated polarization detectors have become the primary focus of future polarization detection technologies. The development of these detectors focuses on two main objectives: enhancing polarization detection performance and incorporating new optical dimensional sensing capabilities. Integrated polarization detectors have achieved extinction ratios as high as infinity, while polarization-dependent balanced detectors enable highly sensitive detection of the changes in the polarization state. These advancements allow for the sensing of additional Stokes parameters and even other dimensions of information from the incident light. Despite significant progress, challenges persist in device design principles and fabrication techniques. Moving forward, the adoption of innovative fabrication methods and materials will further elevate detector performance. Additionally, integrating artificial intelligence algorithms is expected to substantially enhance the efficiency and accuracy of multi-Stokes parameter reconstruction and the interpretation of high-dimensional optical information.

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    Yong-Hao BU, Jing ZHOU, Jie DENG, Ruo-Wen WANG, Tao YE, Meng-Die SHI, Jun-Wei HUANG, Yu-Jie ZHANG, Jun NING, Wei LU, Xiao-Shuang CHEN. Advances in integrated polarization detectors with innovative features[J]. Journal of Infrared and Millimeter Waves, 2025, 44(3): 371

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    Paper Information

    Category: Infrared Physics, Materials and Devices

    Received: Feb. 13, 2025

    Accepted: --

    Published Online: Jul. 9, 2025

    The Author Email: Jing ZHOU (jzhou@mail.sitp.ac.cn), Xiao-Shuang CHEN (xschen@mail.sitp.ac.cn)

    DOI:10.11972/j.issn.1001-9014.2025.03.007

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