Photonics Research, Volume. 8, Issue 10, 1648(2020)

56 Gbps high-speed Ge electro-absorption modulator

Zhi Liu1,2, Xiuli Li1,2, Chaoqun Niu1,2, Jun Zheng1,2, Chunlai Xue1,2, Yuhua Zuo1,2, and Buwen Cheng1,2,3、*
Author Affiliations
  • 1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Beijing Academy of Quantum Information Sciences, Beijing 100193, China
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    Figures & Tables(8)
    (a) Schematic view of the EAM, (b) schematic cross-sectional structure of the EAM.
    (a) Cross-sectional optical field distribution of the EAM, (b) loss of the fundamental TE mode of the device’s structure, (c) electric field distribution in the EAM at −2 V, and (d) extracted electric field distributions at the center of the Ge waveguide at 0 V and −2 V. The inset of (b) is the optical field distribution of the light (1610 nm) coupling into/out of the EAM.
    (a) Top-view optical micrograph of the EAMs, (b) cross-sectional SEM image of the EAM.
    Typical I-V curves (with or without light input) and C-V curve of the EAM.
    (a) Optical transmission loss of the EAM (at various bias voltages) and without EAM, (b) IL and dc ER curves (at various bias voltages) of the EAM.
    S21 and S11 curves of the EAM at various bias voltages. The inset is the equivalent circuit model of the EAM.
    56 Gbps eye diagrams of the EAM at 1600 and 1610 nm.
    • Table 1. Performance Comparison for Ge or GeSi EAMs

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      Table 1. Performance Comparison for Ge or GeSi EAMs

      Modulator TypeRefs.SOI Platform (μm)Footprint (μm2)Wavelength (nm)Voltage Swing (V)Optical Bandwidth (nm)3 dB Bandwidth (GHz)Energy per Bit (fJ/bit)DC ER (dB)IL (dB)Dynamic ER (dB)Max. Bit Rate (Gbps)
      GeSi EAM[12]350×1015503>40381475.94.84.528
      Ge EAM[13]0.2240×1016152>22.5>5012.84.64.93.356
      GeSi EAM[18]0.2240×101560230>5013.84.24.43.050
      GeSi EAM[14]0.840×5015664/56445.610.65.256
      Ge EAMThis work0.2240×1516103>3036453.66.22.756
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    Zhi Liu, Xiuli Li, Chaoqun Niu, Jun Zheng, Chunlai Xue, Yuhua Zuo, Buwen Cheng, "56 Gbps high-speed Ge electro-absorption modulator," Photonics Res. 8, 1648 (2020)

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    Paper Information

    Category: Silicon Photonics

    Received: Jun. 25, 2020

    Accepted: Aug. 19, 2020

    Published Online: Sep. 30, 2020

    The Author Email: Buwen Cheng (cbw@semi.ac.cn)

    DOI:10.1364/PRJ.401140

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