56 Gbps high-speed Ge electro-absorption modulator

Zhi Liu; Xiuli Li; Chaoqun Niu; Jun Zheng; Chunlai Xue; Yuhua Zuo; Buwen Cheng

doi:10.1364/PRJ.401140

Photonics Research, Volume. 8, Issue 10, 1648(2020)

56 Gbps high-speed Ge electro-absorption modulator

Zhi Liu^1,2, Xiuli Li^1,2, Chaoqun Niu^1,2, Jun Zheng^1,2, Chunlai Xue^1,2, Yuhua Zuo^1,2, and Buwen Cheng^1,2,3、*

¹State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³Beijing Academy of Quantum Information Sciences, Beijing 100193, China

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Zhi Liu, Xiuli Li, Chaoqun Niu, Jun Zheng, Chunlai Xue, Yuhua Zuo, Buwen Cheng, "56 Gbps high-speed Ge electro-absorption modulator," Photonics Res. 8, 1648 (2020)

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Paper Information

Category: Silicon Photonics

Received: Jun. 25, 2020

Accepted: Aug. 19, 2020

Published Online: Sep. 30, 2020

The Author Email: Buwen Cheng (cbw@semi.ac.cn)

DOI:10.1364/PRJ.401140

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology