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INFRARED, Volume. 46, Issue 7, 20(2025)

Study on As-Doping of Si-Based HgCdTe Materials by Molecular Beam Epitaxy

Dan WANG, Zhen LI, Meng-jia JIANG, Wei-rong XING, and Chong-shang GUAN
Author Affiliations
  • The 11th Research Institute of China Electronics Technology Group Corporation, Beijing 100015, China
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    WANG Dan, LI Zhen, JIANG Meng-jia, XING Wei-rong, GUAN Chong-shang. Study on As-Doping of Si-Based HgCdTe Materials by Molecular Beam Epitaxy[J]. INFRARED, 2025, 46(7): 20

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    Received: Nov. 14, 2024

    Accepted: Aug. 12, 2025

    Published Online: Aug. 12, 2025

    The Author Email:

    DOI:10.3969/j.issn.1672-8785.2025.07.003

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology