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Journal of Inorganic Materials, Volume. 40, Issue 2, 128(2025)

Progress on Key Technologies of Cavity-structured Thin Film Bulk Acoustic Wave Filter

Guilong TAO1,2, Guowei ZHI2, Tianyou LUO2, Peidong OUYANG2, Xinyan YI3, and Guoqiang LI1,2,3、*
Author Affiliations
  • 11. School of Integrated Circuits, South China University of Technology, Guangzhou 511442, China
  • 22. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
  • 33. Guangzhou FLCT Communication Technology Co., Ltd., Guangzhou 510700, China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (19)
    Equations (5)
    References (103)
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    Figures & Tables(19)
    Operating principle of the L-type FBAR filter
    1. Operating principle of the L-type FBAR filter

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    FBAR and the equivalent circuit model of piezoelectric thin film
    2. FBAR and the equivalent circuit model of piezoelectric thin film

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    Nonlinear distortion of the duplexer[23]
    3. Nonlinear distortion of the duplexer[23]

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    BAW resonator based on AlN thin film[25]
    4. BAW resonator based on AlN thin film[25]

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    Resonator with edge Bragg reflection layer structure[31]
    5. Resonator with edge Bragg reflection layer structure[31]

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    (a) Cross-section and (b) top view of FBAR[35]
    6. (a) Cross-section and (b) top view of FBAR[35]

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    Discretized model and electrode feed lines of BAW resonator[36]
    7. Discretized model and electrode feed lines of BAW resonator[36]

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    3.55 GHz FBAR filter based on single-crystal and polycrystalline AlN[54]
    8. 3.55 GHz FBAR filter based on single-crystal and polycrystalline AlN[54]

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    Single crystal AlN-FBAR filter[55]
    9. Single crystal AlN-FBAR filter[55]

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    Measured values of transmission response of FBAR filter[64]
    10. Measured values of transmission response of FBAR filter[64]

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    Experimental results of FBAR filter fabricated with Al0.8Sc0.2N film[65]
    11. Experimental results of FBAR filter fabricated with Al0.8Sc0.2N film[65]

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    Effect of Sc-dopant concentration on crystal quality and surface morphology of Al1−xScxN thin films[69]
    12. Effect of Sc-dopant concentration on crystal quality and surface morphology of Al1−xScxN thin films[69]

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    Performance comparison of FBAR obtained by two-step (Sample 1) and single PVD (Sample 2) processes[86]
    13. Performance comparison of FBAR obtained by two-step (Sample 1) and single PVD (Sample 2) processes[86]

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    Schematic diagram for SABAR process[87]
    14. Schematic diagram for SABAR process[87]

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    N77-band hybrid filter based on FBAR and IPD technology[88]
    15. N77-band hybrid filter based on FBAR and IPD technology[88]

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    N41-band hybrid filter based on FBAR and IPD technology[89]
    16. N41-band hybrid filter based on FBAR and IPD technology[89]

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    Convolutional hybrid network for the filter parameter prediction[94]
    17. Convolutional hybrid network for the filter parameter prediction[94]

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    LTE 4G/5G radio frequency front end module structure[98]
    18. LTE 4G/5G radio frequency front end module structure[98]

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    • Table 1. Technical characteristics of SAW filter and BAW filter

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      Table 1. Technical characteristics of SAW filter and BAW filter

      Filter typeSAW filterBAW filter
      CharacteristicHigh stability, low insertion loss (2-4 dB)High stability, low insertion loss (0.8-1.5 dB), high power tolerance
      Applicable frequency range10 MHz-3 GHz1.5-6 GHz, the maximum up to over 10 GHz
      AdvantageSmaller than the traditional ceramic filter, flexible, mature technology, high reliabilitySuitable for high frequency, insensitive to temperature changes, miniaturized vertical propagation in acoustic wave, decreased size according to frequency increase
      LimitationPoor thermal stability, decreased Q-value when operating frequency exceeds 1.5 GHzHigh manufacturing cost, complex manufacturing process
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    Guilong TAO, Guowei ZHI, Tianyou LUO, Peidong OUYANG, Xinyan YI, Guoqiang LI. Progress on Key Technologies of Cavity-structured Thin Film Bulk Acoustic Wave Filter[J]. Journal of Inorganic Materials, 2025, 40(2): 128

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    Paper Information

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    Received: Jul. 27, 2024

    Accepted: --

    Published Online: Apr. 24, 2025

    The Author Email: Guoqiang LI (msgli@scut.edu.cn)

    DOI:10.15541/jim20240355

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology