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Acta Optica Sinica, Volume. 44, Issue 9, 0913001(2024)

Critical Pattern Selection Method Based on Breadth-First Search for Full-Chip Source-Mask Optimization

Xinhua Yang1,2, Yipeng Jiang1,2, Sikun Li1,2、*, Lufeng Liao1,2, Shuang Zhang3,5, Libin Zhang3,5, Shengrui Zhang4, Weijie Shi4, Yayi Wei3,5, and Xiangzhao Wang1,6
Author Affiliations
  • 1Department of Advanced Optical and Microelectronic Equipment, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3EDA Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
  • 4Dongfang Jingyuan Electron Co., Ltd., Beijing 100176, China
  • 5School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 100049, China
  • 6College of Optical Science and Engineering, Zhejiang University, Hangzhou 310058, Zhejiang, China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (15)
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    References (24)
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    Figures & Tables(15)
    Diagram of frequency extraction

    Fig. 1. Diagram of frequency extraction

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    Flowchart of representative frequency selection

    Fig. 2. Flowchart of representative frequency selection

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    Schematic of critical pattern selection

    Fig. 3. Schematic of critical pattern selection

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    Schematic of depth-first search pattern selection method

    Fig. 4. Schematic of depth-first search pattern selection method

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    Schematic of breadth-first search pattern selection method

    Fig. 5. Schematic of breadth-first search pattern selection method

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    Flow chart of pattern selection algorithm

    Fig. 6. Flow chart of pattern selection algorithm

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    Selection result (with marked arrow) of proposed method with graph periodicity

    Fig. 7. Selection result (with marked arrow) of proposed method with graph periodicity

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    Critical pattern selection result of Tachyon Tflex with graph periodicity

    Fig. 8. Critical pattern selection result of Tachyon Tflex with graph periodicity

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    Optimized sources and process windows after SMO with graph periodicity. (a) Optimized source obtained by Tachyon Tflex; (b) optimized source obtained by proposed method; (c) common process windows; (d) exposure latitude versus depth of focus

    Fig. 9. Optimized sources and process windows after SMO with graph periodicity. (a) Optimized source obtained by Tachyon Tflex; (b) optimized source obtained by proposed method; (c) common process windows; (d) exposure latitude versus depth of focus

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    Critical pattern selection result of proposed method without graph periodicity

    Fig. 10. Critical pattern selection result of proposed method without graph periodicity

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    Critical pattern selection result of Tachyon Tflex without graph periodicity

    Fig. 11. Critical pattern selection result of Tachyon Tflex without graph periodicity

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    Optimized sources and process windows after SMO without graph periodicity. (a) Optimized source obtained by Tachyon Tflex; (b) optimized source obtained by G3 mask of the proposed method; (c) common process windows; (d) exposure latitude versus depth of focus

    Fig. 12. Optimized sources and process windows after SMO without graph periodicity. (a) Optimized source obtained by Tachyon Tflex; (b) optimized source obtained by G3 mask of the proposed method; (c) common process windows; (d) exposure latitude versus depth of focus

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    • Table 1. Simulation conditions

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      Table 1. Simulation conditions

      ItemDescription
      LithographyNXT: 1950i
      MaskBinary/dark field
      SourceFreeform
      PolarizationXY

    • Table 2. Comparison of key indices calculated at 10% CDO and 5% EL variation with graph periodicity

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      Table 2. Comparison of key indices calculated at 10% CDO and 5% EL variation with graph periodicity

      MethodDOF /nmMEEFILS
      Proposed（group A）131.322.1722.96
      Tachyon Tflex128.942.0923.28

    • Table 3. Comparison of key indices calculated at 10% CDO and 5% EL variation without graph periodicity

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      Table 3. Comparison of key indices calculated at 10% CDO and 5% EL variation without graph periodicity

      MethodDOF /nmMEEFILS
      Proposed（G3）134.162.1123.23
      Tachyon Tflex129.662.0923.21
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    Xinhua Yang, Yipeng Jiang, Sikun Li, Lufeng Liao, Shuang Zhang, Libin Zhang, Shengrui Zhang, Weijie Shi, Yayi Wei, Xiangzhao Wang. Critical Pattern Selection Method Based on Breadth-First Search for Full-Chip Source-Mask Optimization[J]. Acta Optica Sinica, 2024, 44(9): 0913001

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    Paper Information

    Category: Integrated Optics

    Received: May. 17, 2023

    Accepted: Mar. 19, 2024

    Published Online: May. 15, 2024

    The Author Email: Sikun Li (lisikun@siom.ac.com)

    DOI:10.3788/AOS231002

    CSTR:32393.14.AOS231002

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology