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Photonics Research, Volume. 10, Issue 1, 222(2022)

Electrically injected GeSn lasers with peak wavelength up to 2.7 μm On the Cover

Yiyin Zhou1,2, Solomon Ojo1,2, Chen-Wei Wu3, Yuanhao Miao1, Huong Tran1, Joshua M. Grant1,2, Grey Abernathy1,2, Sylvester Amoah1, Jake Bass1, Gregory Salamo4,5, Wei Du6, Guo-En Chang3, Jifeng Liu7, Joe Margetis8, John Tolle8, Yong-Hang Zhang8, Greg Sun9, Richard A. Soref9, Baohua Li10, and Shui-Qing Yu1,5、*
Author Affiliations
  • 1Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
  • 2Microelectronics-Photonics Program, University of Arkansas, Fayetteville, Arkansas 72701, USA
  • 3Department of Mechanical Engineering, Taiwan Chung-Cheng University, Ming-Hsiung, Chiayi 62102, China
  • 4Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
  • 5Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
  • 6Department of Electrical Engineering and Physics, Wilkes University, Wilkes-Barre, Pennsylvania 18766, USA
  • 7Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755, USA
  • 8School of Electrical, Energy and Computer Engineering, Arizona State University, Tempe, Arizona 85287, USA
  • 9Department of Electrical Engineering, University of Massachusetts Boston, Boston, Massachusetts 02125, USA
  • 10Arktonics, LLC, Fayetteville, Arkansas 72701, USA
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    [17] G. E. Chang, S. W. Chang, S. L. Chuang. Theory for n-type doped, tensile-strained Ge-SixGeySn1-x-y quantum-well lasers at telecom wavelength. Opt. Express, 17, 11246-11258(2009).

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    [19] Y. Zhou, W. Dou, W. Du, T. Pham, S. A. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. Soref, B. Li, M. Mortazavi, H. Naseem, S.-Q. Yu. Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications. J. Appl. Phys., 120, 023102(2016).

    [20] M. Bertrand, N. Pauc, Q. M. Thai, J. Chrétien, L. Casiez, A. Quintero, P. Rodriguez, R. Khazaka, J. Aubin, J. M. Hartmann, A. Chelnokov, V. Calvo, V. Reboud. Mid-infrared GeSn-based LEDs with Sn content up to 16%. IEEE 16th International Conference on Group IV Photonics, 1-2(2019).

    [21] S. L. Chuang. Physics of Photonic Devices, 416-417.

    [22] S. V. Kondratenko, Yu. V. Hyrka, Yu. I. Mazur, A. V. Kuchuk, W. Dou, H. Tran, J. Margetis, J. Tolle, S.-Q. Yu, G. J. Salamo. Photovoltage spectroscopy of direct and indirect bandgaps of strained Ge1-xSnx thin films on a Ge/Si(001) substrate. Acta Mater., 171, 40-47(2019).

    [23] H. Tran, W. Du, S. Ghetmiri, A. Mosleh, G. Sun, R. Soref, J. Margetis, J. Tolle, B. Li, H. Naseem, S.-Q. Yu. Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics. J. Appl. Phys., 119, 103106(2016).

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    Yiyin Zhou, Solomon Ojo, Chen-Wei Wu, Yuanhao Miao, Huong Tran, Joshua M. Grant, Grey Abernathy, Sylvester Amoah, Jake Bass, Gregory Salamo, Wei Du, Guo-En Chang, Jifeng Liu, Joe Margetis, John Tolle, Yong-Hang Zhang, Greg Sun, Richard A. Soref, Baohua Li, Shui-Qing Yu, "Electrically injected GeSn lasers with peak wavelength up to 2.7 μm," Photonics Res. 10, 222 (2022)

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    Paper Information

    Category: Silicon Photonics

    Received: Sep. 14, 2021

    Accepted: Nov. 9, 2021

    Published Online: Dec. 20, 2021

    The Author Email: Shui-Qing Yu (syu@uark.edu)

    DOI:10.1364/PRJ.443144

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology