Electrically injected GeSn lasers with peak wavelength up to 2.7 μm

Yiyin Zhou; Solomon Ojo; Chen-Wei Wu; Yuanhao Miao; Huong Tran; Joshua M. Grant; Grey Abernathy; Sylvester Amoah; Jake Bass; Gregory Salamo; Wei Du; Guo-En Chang; Jifeng Liu; Joe Margetis; John Tolle; Yong-Hang Zhang; Greg Sun; Richard A. Soref; Baohua Li; Shui-Qing Yu

doi:10.1364/PRJ.443144

Photonics Research, Volume. 10, Issue 1, 222(2022)

Electrically injected GeSn lasers with peak wavelength up to 2.7 μm On the Cover

Yiyin Zhou^1,2, Solomon Ojo^1,2, Chen-Wei Wu³, Yuanhao Miao¹, Huong Tran¹, Joshua M. Grant^1,2, Grey Abernathy^1,2, Sylvester Amoah¹, Jake Bass¹, Gregory Salamo^4,5, Wei Du⁶, Guo-En Chang³, Jifeng Liu⁷, Joe Margetis⁸, John Tolle⁸, Yong-Hang Zhang⁸, Greg Sun⁹, Richard A. Soref⁹, Baohua Li¹⁰, and Shui-Qing Yu^1,5、*

Author Affiliations

¹Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA

²Microelectronics-Photonics Program, University of Arkansas, Fayetteville, Arkansas 72701, USA

³Department of Mechanical Engineering, Taiwan Chung-Cheng University, Ming-Hsiung, Chiayi 62102, China

⁴Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA

⁵Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA

⁶Department of Electrical Engineering and Physics, Wilkes University, Wilkes-Barre, Pennsylvania 18766, USA

⁷Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755, USA

⁸School of Electrical, Energy and Computer Engineering, Arizona State University, Tempe, Arizona 85287, USA

⁹Department of Electrical Engineering, University of Massachusetts Boston, Boston, Massachusetts 02125, USA

¹⁰Arktonics, LLC, Fayetteville, Arkansas 72701, USA

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Figures & Tables(8)

Fig. 1. (a) 3D schematic of the ridge waveguide laser designed structure; (b) three experiment groups are studied with tuning of the total cap thickness, cap layer material, and active region Sn composition.

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Fig. 2. Characterizations of sample E. (a) Temperature-dependent L-I curve. (b) Lasing spectra under injections below and above threshold at 10 K. The PL spectrum was also plotted for comparison. (c) Emission spectra under injections below and above threshold at 90 K; inset: semi-log plot of the spectra.

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Fig. 3. L-I curves of each sample at (a) 10 K, (b) 50 K, and (c) 90 K.

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Fig. 4. Normalized spectra showing the lasing peaks under 1.1×Jth injection for each sample at the corresponding operational temperatures.

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Fig. 5. Calculated metal absorption loss and FCA loss in p-type cap layer for sample A as functions of SiGeSn cap layer total thickness.

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Table 1. Summary of Laser Structure

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Table 1. Summary of Laser Structure

Sample	p-type Cap			GeSn Active Region		n-type Buffer
Sample	Material	Thickness (nm)	$Δ E_{c}^{*}$ (meV)	Sn Composition (%)	Thickness (nm)	Material	Thickness (nm)
A	${Si}_{0.03} {Ge}_{0.89} {Sn}_{0.08}$	190	114	11.2	610	${Ge}_{0.93} {Sn}_{0.07}$	950
B	${Si}_{0.03} {Ge}_{0.89} {Sn}_{0.08}$	150	114	10.8	430	${Ge}_{0.93} {Sn}_{0.07}$	670
C	${Ge}_{0.95} {Sn}_{0.05}$	220	58	11.2	520	${Ge}_{0.93} {Sn}_{0.07}$	650
D	${Ge}_{0.95} {Sn}_{0.05}$	100	58	11.5	450	${Ge}_{0.93} {Sn}_{0.07}$	610
E	${Si}_{0.03} {Ge}_{0.89} {Sn}_{0.08}$	180	131	13.1	540	${Ge}_{0.93} {Sn}_{0.07}$	540

Table 2. Summary of Laser Characteristics^a

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Table 2. Summary of Laser Characteristics^a

Sample	Cap Layer Material	Cap Layer Thickness (nm)	Sn Composition in Active Region (%)	Threshold at 10 K ( $kA / {cm}^{2}$ )	Threshold at 77 K ( $kA / {cm}^{2}$ )	$T_{\max}$ (K)	$T_{0}^{a}$ (K)	Lasing Wavelength at 10 K (nm)
A	${Si}_{0.03} {Ge}_{0.89} {Sn}_{0.08}$	190	11	0.6	1.4	100	76	2238
B	${Si}_{0.03} {Ge}_{0.89} {Sn}_{0.08}$	150	11	1.4	N.A.	50	119	2281
C	${Ge}_{0.95} {Sn}_{0.05}$	220	11	2.4	3.1	90	123	2294
D	${Ge}_{0.95} {Sn}_{0.05}$	100	11	3.4	N.A.	10	N.A.	2272
E	${Si}_{0.03} {Ge}_{0.89} {Sn}_{0.08}$	180	13	1.4	2.9	90	81	2654

Table 3. Calculated Loss and Threshold at 10 K

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Table 3. Calculated Loss and Threshold at 10 K

Sample	Metal Absorption Loss ( ${cm}^{- 1}$ )	P-type Cap FCA Loss ( ${cm}^{- 1}$ )	Active Region FCA Loss ( ${cm}^{- 1}$ )	N-type Buffer FCA Loss ( ${cm}^{- 1}$ )	Mirror Loss ( ${cm}^{- 1}$ )	Total Loss ( ${cm}^{- 1}$ )	Threshold at 10 K ( $kA / {cm}^{2}$ )
A	554	39	383	6	6	988	0.6
B	1287	51	320	7	8	1673	1.4
C	720	72	443	9	8	1252	2.4
D	1724	36	341	11	8	2120	3.4
E	1557	70	753	11	8	2399	1.4

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Yiyin Zhou, Solomon Ojo, Chen-Wei Wu, Yuanhao Miao, Huong Tran, Joshua M. Grant, Grey Abernathy, Sylvester Amoah, Jake Bass, Gregory Salamo, Wei Du, Guo-En Chang, Jifeng Liu, Joe Margetis, John Tolle, Yong-Hang Zhang, Greg Sun, Richard A. Soref, Baohua Li, Shui-Qing Yu, "Electrically injected GeSn lasers with peak wavelength up to 2.7 μm," Photonics Res. 10, 222 (2022)

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