[1] [1] ZHOU H, CHEN Y, LIU C. High-quality InAs homoepitaxial layers grown by molecular beam epitaxy[J]. Journal of Crystal Growth, 2025, 650: 127989.

[2] [2] WUNDER R, STALL R, MALIK R, et al. Automated growth of AlxGa1−xAs and InxGa1−xAs by molecular beam epitaxy using an ion gauge flux monitor[J]. Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1985, 3(4): 964-967.

[3] [3] SHEN C, ZHAN W, LI M, et al. Development of in situ characterization techniques in molecular beam epitaxy[J]. Journal of Semiconductors, 2024, 45(3): 031301.

[4] [4] KOMETANI T Y, WIEGMANN W. Measurement of Ga and Al in a molecular-beam epitaxy chamber by atomic absorption spectrometry (AAS)[J]. Journal of Vacuum Science and Technology, 1975, 12(4): 933-936.

[5] [5] DU Y, DROUBAY T C, LIYU A V, et al. Self-corrected sensors based on atomic absorption spectroscopy for atom flux measurements in molecular beam epitaxy[J]. Applied Physics Letters, 2014, 104(16): 163110.

[6] [6] LAGALANTE A F. Atomic absorption spectroscopy: a tutorial review[J]. Applied Spectroscopy Reviews, 2004, 34(3): 173-189.

[7] [7] JENSEN J, ROTH J, BREWER P, et al. Integrated multi-sensor control of II–VI MBE for growth of complex IR detector structures[J]. Journal of Electronic Materials, 1998, 27: 494-499.

[8] [8] VIGNAUD D, MOLLOT F. Real-time in-situ flux monitoring by wavelength-modulated atomic absorption spectroscopy in molecular beam epitaxy: Application to Ga flux measurement[J]. Journal of Crystal Growth, 2007, 301/302: 79-83.

[9] [9] KASAI Y, SUZUKI A, TANOUE H, et al. MBE growth of BiSrCaCuO films using flux monitoring by atomic absorption spectroscopy[C]//Proceedings of the 7th International Symposium on Superconductivity (ISS’94). Berlin: Springer, 1995: 897-900.

[12] [12] HEYN C, CUNIS S. Shutter transients during solid-source epitaxy[J]. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2005, 23(5): 2014-2020.

[13] [13] FOXON C T. Dynamic aspects of growth by MBE[C]//Proceedings of the Winter School Les Houches. Berlin: Springer, 1986: 216-225.

[14] [14] PARKER E H C. The technology and physics of molecular beam epitaxy[M]. Boston: Springer US, 1985.

[15] [15] AUTOMATION B. The instruction manual of Granville-Phillips series 350 UHV gauge controller[EB/OL]. [2025-02-03]. https://bl831.als.lbl.gov/~gmeigs/PDF/Granville_Phillips_350_IG_Controller.pdf.

[16] [16] JACKSON A W, PINSUKANJANA P R, GOSSARD A C, et al. Noise, drift, and calibration in optical flux monitoring for MBE[J]. Journal of crystal growth, 1999, 201/202: 17-21.